UNISONIC TECHNOLOGIES CO., LTD
Preliminary
URFP150
41A, 100V N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC
URFP150
is an N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with a
minimum on-state resistance and high switching speed.
1
Power MOSFET
TO-247
FEATURES
* R
DS(ON)
<55mΩ @ V
GS
=10V,I
D
=25A
* High Switching Speed
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
URFP150L-T47-T
URFP150G-T47-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R502-754.a
URFP150
ABSOLUTE MAXIMUM RATINGS
Preliminary
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
100
V
Gate-Source Voltage
V
GSS
±20
V
41
A
Continuous
I
D
Continuous Drain Current
A
Pulsed
I
DM
160
Avalanche Current
I
AR
41
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
830
mJ
Power Dissipation
P
D
192
W
Junction Temperature
T
J
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L =
740μH,
I
AS
=
41A,
V
DD
=
25V,
R
G
= 25
Ω
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=80V
Forward
V
GS
=+20V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=25A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DD
=50V, V
GS
=10V,
Gate to Source Charge
Q
GS
I
D
=41A, I
G
=100µA,
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω,
V
GS
=0~10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=41A
MIN
100
10
+100
-100
2
4
55
2800
1100
280
140
29
68
16
120
60
81
41
160
2.5
TYP
MAX UNIT
V
µA
nA
nA
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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