Datasheet> 器件分类 > 分立半导体> 晶体管> DTA144EE

文档预览

DTA144EE: 产品描述Transistor,; 产品类别分立半导体晶体管; 文件大小169KB，共4页; 制造商Galaxy Semi-Conductor Co Ltd

下载文档详细参数选型对比全文预览

DTA144EE概述

Transistor,

DTA144EE规格参数

参数名称	属性值
厂商名称	Galaxy Semi-Conductor Co Ltd
包装说明	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	68
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz

文档预览

下载PDF文档

全文
预览

Galaxy Electrical

Digital Transistor

FEATURES

Epitaxial planar die construction.

Complementary NPN types available(DTC)

Built-in biasing resistors,R

Also available in lead free version.

Production specification

DTA(R

SERIES)E

Lead-free

APPLICATIONS

The PNP style digital transistor.

SOT-523

ORDERING INFORMATION

Type No.

DTA114EE

DTA143EE

DTA124EE

DTA144EE

Marking

Package Code

SOT-523

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

Parameter

Supply Voltage

Input Voltage

DTA114EE

DTA124EE

DTA143EE

DTA144EE

DTA114EE

DTA124EE

DTA143EE

DTA144EE

ALL

Value

-50

+10 to-40

+10 to -40

+10 to -30

+10 to -40

-50

-30

-100

-30

-100

150

833

-55 to +150

Units

Output Current

(Max.)

θJA

stg

Output current

Power Dissipation

℃/W

℃

Thermal Resistance, Junction to Ambient Air

Operating and Storage and Temperature Range

Document number: BL/SSDTH021

Rev.A

www.galaxycn.com

DTA144EE相似产品对比

	DTA144EE	DTA114EE	DTA143EE	DTA124EE
描述	Transistor,	Transistor,	Transistor,	Transistor,
厂商名称	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow	unknown	unknown	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	68	30	20	56
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP
表面贴装	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz

推荐资源

基于AT89S52单片机的太阳能路灯设计方案

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多