AP15T20GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristics
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
200V
250mΩ
10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and using infrared reflow technique and
suited for high current application due to the low connection resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
200
+20
10
6.1
26
62.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
2
62.5
Unit
℃/W
℃/W
1
201202291
Data & specifications subject to change without notice
AP15T20GH-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=160V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=5A
V
DS
=160V
V
GS
=10V
V
DD
=100V
I
D
=5A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
200
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
20
-
-
45
5.5
15
10
10
37
11
100
65
1.5
Max. Units
-
250
260
3
-
25
+100
72
-
-
-
-
-
-
-
-
3
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
1950 3120
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
Parameter
Forward On Voltage
2
Test Conditions
I
S
=5A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
100
380
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15T20GH-HF
30
16
T
C
= 25
o
C
I
D
, Drain Current (A)
I
D
, Drain Current (A)
20
10V
7.0V
6.0V
5.0V
V
G
=4.0V
T
C
=150 C
12
o
10V
7.0V
6.0V
5.0V
V
GS
=4.0V
8
10
4
0
0
4
8
12
16
20
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
2.8
I
D
=1mA
2.4
1.4
I
D
=5A
V
GS
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
-50
0
50
100
150
2
1.2
1.6
1.2
1
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
8
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I
D
=250uA
1.6
6
Normalized V
GS(th)
I
S
(A)
1.2
4
T
j
=150
o
C
2
T
j
=25
o
C
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15T20GH-HF
12
2400
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=5A
V
DS
=160V
2000
C
iss
8
1600
6
C (pF)
1200
4
800
2
400
0
0
10
20
30
40
50
60
C
oss
C
rss
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
100us
0.2
I
D
(A)
0.1
0.1
0.05
1
T
c
=25
o
C
Single Pulse
0
0.1
1
10
100
1ms
10ms
100ms
1s
DC
P
DM
0.02
t
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
12
V
G
10
I
D
, Drain Current (A)
Q
G
8
10V
Q
GS
Q
GD
6
4
2
Charge
0
25
50
75
100
125
150
Q
T
C
, Case Temperature (
o
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
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