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FMB175: 产品描述RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6; 产品类别分立半导体晶体管; 文件大小14KB，共1页; 制造商Advanced Semiconductor, Inc.

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FMB175概述

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6

FMB175规格参数

参数名称	属性值
厂商名称	Advanced Semiconductor, Inc.
包装说明	FLANGE MOUNT, O-CXFM-F6
针数	6
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	16 A
基于收集器的最大容量	150 pF
集电极-发射极最大电压	25 V
配置	SINGLE
最小直流电流增益 (hFE)	20
最高频带	VERY HIGH FREQUENCY BAND
JESD-30 代码	O-CXFM-F6
元件数量	1
端子数量	6
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	FLANGE MOUNT
极性/信道类型	NPN
最大功率耗散 (Abs)	270 W
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	UNSPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

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FMB175

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI FMB175

is Designed for

Class C, FM Broadcast Applications

up to 108 MHz.

PACKAGE STYLE .500 6L FLG

2x ØN

FU LL R

FEATURES:

•

Class C Operation

•

= 10 dB at 175 W/108 MHz

•

Omnigold™

Metalization System

.725/18,42

MAXIMUM RATINGS

CBO

CEO

CES

EBO

DISS

STG

20 A

65 V

36 V

65 V

4.0 V

270 W @ T

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.7 °C/W

D IM

M IN IM U M

inche s / m m

M AX IM U M

inche s / m m

.150 / 3.43

.045 / 1.14

.210 / 5.33

.835 / 21.21

.200 / 5.08

.490 / 12.45

.003 / 0.08

.125 / 3.18

.725 / 18.42

.970 / 24.64

.090 / 2.29

.150 / 3.81

.120 / 3.05

.160 / 4.06

.220 / 5.59

.865 / 21.97

.210 / 5.33

.510 / 12.95

.007 / 0.18

.980 / 24.89

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

ORDER CODE: ASI10589

CHARACTERISTICS

SYMBOL

CBO

CES

CEO

EBO

CES

= 25°C

NONETEST

CONDITIONS

= 100 mA

= 10 mA

= 28 V

= 5.0 V

= 28 V

OUT

= 175 W

= 5.0 A

f = 1.0 MHz

f = 108 MHz

MINIMUM TYPICAL MAXIMUM

4.0

200

UNITS

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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