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BC846ALT1 Series

BC846, BC847 and BC848 are Preferred Devices

General Purpose

Transistors

NPN Silicon

Features

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COLLECTOR

3

1

BASE

Symbol

V

CEO

65

45

30

V

CBO

80

50

30

V

EBO

BC846

BC847, BC850

BC848, BC849

Collector Current − Continuous

I

C

6.0

5.0

100

mAdc

Vdc

1

2

•

Pb−Free Packages are Available

•

Moisture Sensitivity Level: 1

•

ESD Rating − Human Body Model: >4000 V

ESD Rating

− Machine Model: >400 V

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

BC846

BC847, BC850

BC848, BC849

Collector−Base Voltage

BC846

BC847, BC850

BC848, BC849

Emitter−Base Voltage

Value

Unit

Vdc

2

EMITTER

3

SOT−23

CASE 318

STYLE 6

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

MARKING DIAGRAM

xxD

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR− 5 Board,

(Note 1)

T

A

= 25°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

Total Device Dissipation

Alumina Substrate (Note 2)

T

A

= 25°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

Symbol

P

D

Max

225

Unit

mW

xx

D

= Specific Device Code

= Date Code

1.8

R

qJA

P

D

556

300

mW/°C

°C/W

mW

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

2.4

R

qJA

T

J

, T

stg

417

−55 to

+150

mW/°C

°C/W

°C

Preferred

devices are recommended choices for future use

and best overall value.

1. FR−5 = 1.0

0.75

0.062 in.

2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.

©

Semiconductor Components Industries, LLC, 2004

1

June, 2004 − Rev. 6

Publication Order Number:

BC846ALT1/D

BC846ALT1 Series

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage BC846A,B

(I

C

= 10 mA)

BC847A,B,C, BC850B,C

BC848A,B,C, BC849B,C

Collector −Emitter Breakdown Voltage BC846A,B

(I

C

= 10

mA,

V

EB

= 0)

BC847A,B,C BC850B,C

BC848A,B,C, BC849B,C

Collector −Base Breakdown Voltage

(I

C

= 10

mA)

Emitter −Base Breakdown Voltage

(I

E

= 1.0

mA)

Collector Cutoff Current (V

CB

= 30 V)

(V

CB

= 30 V, T

A

= 150°C)

ON CHARACTERISTICS

DC Current Gain

(I

C

= 10

mA,

V

CE

= 5.0 V)

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B,

BC849B, BC850B

BC847C, BC848C, BC849C, BC850C

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

−

110

200

420

−

580

−

90

150

270

180

290

520

−

0.7

0.9

660

−

220

450

800

0.25

0.6

−

700

770

V

mV

−

BC846A,B

BC847A,B,C, BC850B,C

BC848A,B,C, BC849B,C

BC846A,B

BC847A,B,C, BC850B,C

BC848A,B,C, BC849B,C

V

(BR)CEO

65

45

30

80

50

30

80

50

30

6.0

5.0

−

15

5.0

V

Symbol

Min

Typ

Max

Unit

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

V

I

CBO

nA

mA

(I

C

= 2.0 mA, V

CE

= 5.0 V)

Collector −Emitter Saturation Voltage (I

C

= 10 mA, I

B

= 0.5 mA)

Collector −Emitter Saturation Voltage

(I

C

= 100 mA, I

B

= 5.0 mA)

Base −Emitter Saturation Voltage (I

C

= 10 mA, I

B

= 0.5 mA)

Base −Emitter Saturation Voltage

(I

C

= 100 mA, I

B

= 5.0 mA)

Base −Emitter Voltage (I

C

= 2.0 mA, V

CE

= 5.0 V)

Base −Emitter Voltage

(I

C

= 10 mA, V

CE

= 5.0 V)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 Vdc, f = 100 MHz)

Output Capacitance (V

CB

= 10 V, f = 1.0 MHz)

Noise Figure (I

C

= 0.2 mA,

V

CE

= 5.0 Vdc, R

S

= 2.0 kW,

f = 1.0 kHz, BW = 200 Hz)

BC846A,B, BC847A,B,C, BC848A,B,C

BC849B,C, BC850B,C

f

T

C

obo

NF

100

−

4.5

10

4.0

MHz

pF

dB

Figure 1.

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2

BC846ALT1 Series

BC847, BC848, BC849, BC850

2.0

hFE , NORMALIZED DC CURRENT GAIN

1.5

1.0

0.8

0.6

0.4

0.3

0.2

V

CE

= 10 V

T

A

= 25°C

V, VOLTAGE (VOLTS)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.2

0.5

50

2.0

5.0 10

1.0

20

I

C

, COLLECTOR CURRENT (mAdc)

100

200

0

0.1

V

CE(sat)

@ I

C

/I

B

= 10

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30

I

C

, COLLECTOR CURRENT (mAdc)

50 70 100

T

A

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 10 V

Figure 1. Normalized DC Current Gain

2.0

T

A

= 25°C

1.6

I

C

= 200 mA

1.2

0.8

0.4

0

I

C

=

I

C

=

10 mA 20 mA

I

C

= 50 mA

I

C

= 100 mA

1.0

Figure 2. “Saturation” and “On” Voltages

VCE , COLLECTOR−EMITTER VOLTAGE (V)

θ

VB, TEMPERATURE COEFFICIENT (mV/

°

C)

−55°C to +125°C

1.2

1.6

2.0

2.4

2.8

0.02

0.1

1.0

I

B

, BASE CURRENT (mA)

10

20

0.2

10

1.0

I

C

, COLLECTOR CURRENT (mA)

100

Figure 3. Collector Saturation Region

f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

10

7.0

C, CAPACITANCE (pF)

5.0

3.0

C

ob

2.0

C

ib

T

A

= 25°C

400

300

200

Figure 4. Base−Emitter Temperature Coefficient

100

80

60

40

30

20

0.5 0.7

1.0

V

CE

= 10 V

T

A

= 25°C

1.0

0.4 0.6 0.8 1.0

2.0

20

4.0 6.0 8.0 10

V

R

, REVERSE VOLTAGE (VOLTS)

40

2.0 3.0

5.0 7.0 10

20

I

C

, COLLECTOR CURRENT (mAdc)

30

50

Figure 5. Capacitances

Figure 6. Current−Gain − Bandwidth Product

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3

BC846ALT1 Series

BC846

1.0

hFE , DC CURRENT GAIN (NORMALIZED)

V

CE

= 5 V

T

A

= 25°C

2.0

1.0

0.5

0.2

0.1 0.2

10

100

1.0

I

C

, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

T

A

= 25°C

0.8

V

BE(sat)

@ I

C

/I

B

= 10

0.6

0.4

0.2

V

CE(sat)

@ I

C

/I

B

= 10

0

0.2

0.5

50

10 20

5.0

1.0 2.0

I

C

, COLLECTOR CURRENT (mA)

100

200

V

BE

@ V

CE

= 5.0 V

Figure 7. DC Current Gain

2.0

T

A

= 25°C

1.6

20 mA

1.2

0.8

0.4

0

I

C

=

10 mA

50 mA

100 mA

200 mA

−1.0

−1.4

−1.8

Figure 8. “On” Voltage

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

θ

VB, TEMPERATURE COEFFICIENT (mV/

°

C)

q

VB

for V

BE

−2.2

−2.6

−3.0

−55°C to 125°C

0.02

0.05

0.1

0.2

0.5

1.0 2.0

I

B

, BASE CURRENT (mA)

5.0

10

20

0.2

0.5

50

10 20

5.0

1.0 2.0

I

C

, COLLECTOR CURRENT (mA)

100

200

Figure 9. Collector Saturation Region

Figure 10. Base−Emitter Temperature Coefficient

T

A

= 25°C

C, CAPACITANCE (pF)

20

C

ib

f T, CURRENT−GAIN − BANDWIDTH PRODUCT

40

500

200

100

50

20

V

CE

= 5 V

T

A

= 25°C

10

6.0

4.0

C

ob

2.0

0.1

0.2

1.0 2.0

10 20

0.5

5.0

V

R

, REVERSE VOLTAGE (VOLTS)

50

100

1.0

5.0 10

50 100

I

C

, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current−Gain − Bandwidth Product

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4

BC846ALT1 Series

ORDERING INFORMATION

Device

BC846ALT1

BC846ALT3

BC846BLT1

BC846BLT3

BC847ALT1

BC847ALT1G

BC847BLT1

BC847CLT1

BC847CLT1G

BC847CLT3

BC847CLT3G

BC848ALT1

BC848ALT1G

BC848BLT1

BC848BLT3

BC848CLT1

BC848CLT1G

BC849BLT1

BC849BLT3

BC849CLT1

BC849CLT1G

BC850BLT1

BC850CLT1

BC850CLT1G

Marking

1A

1B

1E

1F

1G

1J

1K

1L

2B

2C

2F

2G

Package

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

Shipping

†

3,000 / Tape & Reel

10,000 / Tape & Reel

3,000 / Tape & Reel

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

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5

BRD8011/D

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