BPW97
Vishay Telefunken
Silicon PIN Photodiode
Description
BPW97 is an extra high speed PIN photodiode in a
hermetically sealed TO–18 package.
Unlike most similar devices, the cathode terminal is
isolated from case and connected to a third terminal,
giving the user all the means to improve shielding of his
system.
Due to its high precision flat glass window and its accu-
rate chip alignment, this device is recommended for
ambitious applications in the optical data transmission
domain.
Features
D
Extra fast response times at low operating volt-
ages
94 8478
D
D
D
D
D
D
D
D
D
Exact central chip alignment
Chip insulated
Shielded construction
Hermetically sealed TO–18 case
Flat optical window
Wide angle of half sensitivity
ϕ
=
±
55
°
Radiant sensitive area A=0.25mm
2
Suitable for visible and near infrared radiation
Suitable for coupling with 50
m
m gradient index fi-
ber
Applications
Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs emitters.
Detector for optical communication, e.g. for optical fiber transmission systems with only 5 V power supply.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
T
amb
Symbol
V
R
P
V
T
j
T
stg
T
sd
R
thJA
Value
60
285
125
–55...+125
260
350
Unit
V
mW
°
C
°
C
°
C
K/W
x
25
°
C
t
x
5s
Document Number 81533
Rev. 2, 20-May-99
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Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Dark Resistance
Serial Resistance
Reverse Light Current
Test Conditions
I
F
= 50 mA
I
R
= 100
m
A, E = 0
V
R
= 50 V, E = 0
V
R
= 50 V, f = 1 MHz, E = 0
V
R
= 10m V, E = 0, f = 0
V
R
= 50 V, f = 1 MHz
E
e
= 1 mW/cm
2
,
l
= 870 nm, V
R
= 50 V
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 50 V
V
R
= 50 V,
l
= 870 nm
V
R
= 5 V,
l
= 870 nm
V
R
= 5 V,
l
= 950 nm
Symbol
V
F
V
(BR)
I
ro
C
D
R
D
R
S
I
ra
I
ra
TK
Ira
s(
l
)
s(
l
)
ϕ
Min
60
1
1.7
5
180
1.3
0.9
0.2
0.50
0.35
±55
810
560...960
80
3.6x10
–14
1.4x10
12
1.2
1.2
0.6
0.6
1
5
Typ
0.9
Max
1.2
Unit
V
V
nA
pF
G
W
1.0
W
m
A
m
A
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity
y
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
l
= 850 nm
Noise Equivalent Power
V
R
= 50 V,
l
= 870 nm
Detectivity
V
R
= 50 V,
l
= 870 nm
Rise Time
Fall Time
Rise Time
Fall Time
Cut–Off Frequency
V
R
= 3.8 V, R
L
= 50
W
,
l
= 780 nm
V
R
= 3.8 V, R
L
= 50
W
,
l
= 780 nm
V
R
= 50 V, R
L
= 50
W
,
l
= 820 nm
V
R
= 50 V, R
L
= 50
W
,
l
= 820 nm
l
= 820 nm
l
p
l
0.5
h
t
r
t
f
t
r
t
f
f
c
NEP
D
*
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
W
ns
ns
ns
ns
GHz
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Rev. 2, 20-May-99
BPW97
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
10
4
V
R
=50V
10
3
I
ra
– Reverse Light Current (
m
A )
I
ro
– Reverse Dark Current ( nA )
10
1
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
10
2
0.1
0.1 mW/cm
2
10
1
l
=950nm
0.01
0.1
1
10
100
V
R
– Reverse Voltage ( V )
10
0
20
94 8445
40
60
80
100
120
94 8448
T
amb
– Ambient Temperature (
°C
)
Figure 1. Reverse Dark Current vs. Ambient Temperature
I
ra rel
– Relative Reverse Light Current
1.4
1.3
1.2
1.1
1.0
0.9
0.8
20
94 8446
Figure 4. Reverse Light Current vs. Reverse Voltage
8
C
D
– Diode Capacitance ( pF )
l
=870nm
V
R
=50V
6
E=0
f=1MHz
4
2
0
40
60
80
100
94 8449
0.1
1
10
100
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
10
I
ra
– Reverse Light Current (
m
A )
Figure 5. Diode Capacitance vs. Reverse Voltage
10
–10
f=1000MHz
500MHz
10
–11
100MHz
10
–12
10MHz
10
–13
1
0.1
V
R
=50V
l
=950nm
0.01
0.01
NEP – Noise Equivalent Power ( W / Hz )
0.1
1
10
10
–14
10
2
l
=870nm
10
3
10
4
10
5
10
6
f;B=1
1MHz
10
7
10
8
94 8447
E
e
– Irradiance ( mW / cm
2
)
94 8450
R
L
– Load Resistance (
W
)
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Noise Equivalent Power vs. Load Resistance
Document Number 81533
Rev. 2, 20-May-99
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BPW97
Vishay Telefunken
S (
l
,
ƒ
)
rel
– Relative Sensitivity ( dB )
3
S
rel
– Relative Sensitivity
2
1
0
–1
15V
–2
–3
1
94 8451
0°
10
°
20
°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
V
R
=50V
10
100
1000
94 8453
0.6
0.4
0.2
0
0.2
0.4
0.6
f – Frequency ( MHz )
Figure 7. Relative Sensitivity vs. Frequency
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
S (
l
)
rel
– Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
350
550
750
950
1150
94 8452
l
– Wavelength ( nm )
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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Document Number 81533
Rev. 2, 20-May-99
BPW97
Vishay Telefunken
Dimensions in mm
96 12182
Document Number 81533
Rev. 2, 20-May-99
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