BPW77NA, BPW77NB
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
94
8401
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 10°
• Base terminal connected
DESCRIPTION
BPW77 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and glass lens. It is sensitive to visible and near
infrared radiation.
• Hermetically sealed package
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW77NA
BPW77NB
Note
Test condition see table “Basic Characteristics”
I
ca
(mA)
7.5 to 15
> 10
ϕ
(deg)
± 10
± 10
λ
0.1
(nm)
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW77NA
BPW77NB
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
PACKAGE FORM
TO-18
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Thermal resistance junction/gase
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5s
Connected with Cu wire, 0.14 mm
2
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
R
thJC
VALUE
80
70
5
50
100
250
125
- 40 to + 125
- 40 to + 125
260
400
150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
K/W
www.vishay.com
402
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527
Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
800
P
tot
- Total Power Dissipation (mW)
600
R
thJC
400
200
R
thJA
0
0
25
50
75
100
125
150
94
8342
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Note
T
amb
= 25 °C, unless otherwise specified
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 1 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
ϕ
λ
p
λ
0.1
V
CEsat
t
on
t
off
f
c
MIN.
70
1
6
± 10
850
450 to 1080
0.15
6
5
110
0.3
100
TYP.
MAX.
UNIT
V
nA
pF
deg
nm
nm
V
µs
µs
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
TEST CONDITION
PART
SYMBOL
I
ca
I
ca
MIN.
7.5
10
TYP.
MAX.
15
UNIT
mA
mA
E
e
= 1 mW/cm
2
,
λ
= 950 nm, BPW77NA
V
CE
= 5 V
BPW77NB
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
6
I
CEO
- Collector Dark Current (nA)
10
5
10
4
10
3
10
2
10
1
10
0
20
94
8343
2.50
I
ca rel
- Relative Collector Current
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0
V
CE
= 5V
E
e
= 1 mW/cm
2
λ
= 950 nm
V
CE
= 20
V
E=0
50
100
150
94
8344
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Document Number: 81527
Rev. 1.5, 08-Sep-08
Fig. 3 - Relative Collector Current vs. Ambient Temperature
www.vishay.com
403
For technical questions, contact: detectortechsupport@vishay.com
BPW77NA, BPW77NB
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
100
t
on
/t
off
- Turn-on/Turn-off Time (µs)
I
ca
- Collector Light Current (mA)
BPW77NB
10
12
10
8
6
t
on
V
CE
= 5
V
R
L
= 100
Ω
λ
= 950 nm
1
BPW77NA
4
2
0
t
off
0.1
V
CE
= 5
V
λ
= 950 nm
0.01
0.01
0.1
1
10
0
4
8
12
16
94
8349
E
e
- Irradiance (mW/cm
2
)
94
8253
I
C
- Collector Current (mA)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
10
I
ca
- Collector Light Current (mA)
λ
= 950 nm
E
e
= 1 mW/cm
2
0.5
0.2 mW/cm
2
mW/cm
2
S (λ)
rel
- Relative Spectral Sensitivity
100
1.0
0.8
0.6
0.4
0.2
0
400
600
800
1000
λ
-
Wavelength
(nm)
1
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
0.1
0.1
1
10
94
8350
V
CE
- Collector Emitter
Voltage
(V)
94
8348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
C
CEO
- Collector Ermitter Capacitance (pF)
20
0°
10°
20°
30°
S
rel
- Relative Sensitivity
16
f = 1 MHz
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
12
8
4
0
0.1
1
10
100
0.6
94
8351
0.4
0.2
0
0.2
0.4
0.6
94
8247
V
CE
- Collector Ermitter
Voltage
(V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
www.vishay.com
404
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527
Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters
B
E
C
Ø 4.69
Chip position
(2.5)
6.15
± 0.25
+ 0.02
- 0.07
0.45
+ 0.02
- 0.05
13.2
± 0.7
5.5
± 0.15
2.54 nom.
technical drawings
according to DIN
specifications
Lens
± 0.05
Drawing-No.: 6.503-5023.01-4
Issue:1; 01.07.96
96 12180
4
Document Number: 81527
Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
405
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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