BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm
2
): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
94 8633
• Angle of half sensitivity:
ϕ
= ± 60°
• Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BPV22NF is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwidth is matched
with 870 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
BPV22NFL has long leads, other specifications like
BPV22NF.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
BPV22NF
BPV22NFL
Note
• Test condition see table “Basic Characteristics”
I
ra
(μA)
85
85
ϕ
(deg)
± 60
± 60
λ
0.5
(nm)
790 to 1050
790 to 1050
ORDERING INFORMATION
ORDERING CODE
BPV22NF
BPV22NFL
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
Side view
Side view, long leads
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
5s
Connected with Cu wire, 0.14 mm
2
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.9, 21-Feb-12
Document Number: 81509
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Open circuit voltage
Temperature coefficient of V
o
Short circuit current
Reverse light current
Temperature coefficient of I
ra
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
Cut-off frequency
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 12 V, R
L
= 1 kΩ,
λ
= 870 nm
V
R
= 12 V, R
L
= 1 kΩ,
λ
= 950 nm
TEST CONDITION
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 12 V, f = 1 MHz
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1
mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 870 nm,
V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 10 V
V
R
= 5 V,
λ
= 870 nm
V
R
= 5 V,
λ
= 950 nm
SYMBOL
V
F
V
(BR)
I
ro
C
D
R
S
V
o
TK
Vo
I
k
I
ra
TK
Ira
s(λ)
s(λ)
55
60
2
70
400
370
- 2.6
80
85
0.1
0.57
0.6
± 60
940
790 to 1050
90
4 x 10
-14
6 x 10
12
100
100
4
1
30
MIN.
TYP.
1
MAX.
1.3
UNIT
V
V
nA
pF
Ω
mV
mV/K
μA
μA
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/W
ns
ns
MHz
MHz
ϕ
λ
p
λ
0.5
η
NEP
D*
t
r
t
f
f
c
f
c
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
I
ro
- Reverse Dark Current (nA)
1.4
I
ra rel
- Relative Reverse Light Current
1.2
100
V
R
= 5
V
λ
= 950 nm
1.0
10
0.8
V
R
= 10
V
1
20
40
60
80
100
0.6
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
94 8403
T
amb
- Ambient Temperature (°C)
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.9, 21-Feb-12
Document Number: 81509
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
1000
S(λ)
rel
- Relative Spectral Sensivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
94 8426
I
ra
- Reverse Light Current (µA)
100
10
V
R
= 5
V
λ
= 950 nm
1
0.1
0.01
94 8411
0.1
1
10
850
950
1050
1150
E
e
- Irradiance (mW/cm
2
)
λ
-
Wavelength
(nm)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
100
I
ra
- Reverse Light Current (µA)
1 mW/cm
2
λ
= 950 nm
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0°
10
°
20
°
30°
ϕ
- Angular Displacement
S
rel
- Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
10
1
0.1
94 8412
0.02 mW/cm
2
1
10
100
94 8413
0.6
0.4
0.2
0
V
R
- Reverse
Voltage
(V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
80
C
D
- Diode Capacitance (pF)
60
E=0
f = 1 MHz
40
20
0
0.1
948407
1
10
100
V
R
- Reverse
Voltage
(V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.9, 21-Feb-12
Document Number: 81509
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPV22NF, BPV22NFL
www.vishay.com
PACKAGE DIMENSIONS
in millimeters: BPV22NF
5
+ 0.1
- 0.3
Vishay Semiconductors
3.2
± 0.15
± 0.2
4.5
± 0.2
(2.4)
2.5
< 0.7
± 0.3
6
± 0.3
18.8
± 0.5
8.6
R 2.25 (sphere)
0.65
+ 0.1
- 0.2
0.1
3.4
+ 0.3
-
Area not plane
A
C
0.45
+ 0.2
- 0.1
0.4
+ 0.15
2.54 nom.
1.1
± 0.2
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
95 11475
PACKAGE DIMENSIONS
in millimeters: BPV22NFL
5
+ 0.1
- 0.3
3.2
± 0.15
± 0.2
4.5
± 0.2
(2.4)
2.5
< 0.7
± 0.3
± 0.3
6
R 2.2
5 (sp
here
)
32.5
± 0.5
10.8
0.75
- 0.12
0.1
3.4
+0.3
-
Area not plane
A
C
0.63
± 0.1
0.4
± 0.1
2.54 nom.
1.1
± 0.2
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5236.01-4
Issue: 2; 07.07.97
96 12205
Rev. 1.9, 21-Feb-12
Document Number: 81509
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000