Power Field-Effect Transistor, 33A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | Vishay(威世) |
| 零件包装代码 | TO-252 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 4 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 33 A |
| 最大漏源导通电阻 | 0.0065 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 100 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| SUD70N03-04P-T4 | SUD70N03-04P-T4-E3 | SUD70N03-04P-E3 | |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 33A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN | Power Field-Effect Transistor, 33A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | , |
| Reach Compliance Code | unknow | unknown | unknown |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | Single |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 表面贴装 | YES | YES | YES |
| 零件包装代码 | TO-252 | TO-252 | - |
| 针数 | 4 | 4 | - |
| ECCN代码 | EAR99 | EAR99 | - |
| 外壳连接 | DRAIN | DRAIN | - |
| 最小漏源击穿电压 | 30 V | 30 V | - |
| 最大漏极电流 (ID) | 33 A | 33 A | - |
| 最大漏源导通电阻 | 0.0065 Ω | 0.0065 Ω | - |
| JEDEC-95代码 | TO-252 | TO-252 | - |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | - |
| 元件数量 | 1 | 1 | - |
| 端子数量 | 2 | 2 | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | - |
| 最大脉冲漏极电流 (IDM) | 100 A | 100 A | - |
| 认证状态 | Not Qualified | Not Qualified | - |
| 端子形式 | GULL WING | GULL WING | - |
| 端子位置 | SINGLE | SINGLE | - |
| 晶体管应用 | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | SILICON | SILICON | - |
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