Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Vishay(威世) |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 配置 | Single |
| 最大漏极电流 (Abs) (ID) | 33 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 88 W |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) - with Nickel (Ni) barrier |
| SUD70N03-04P-E3 | SUD70N03-04P-T4-E3 | SUD70N03-04P-T4 | |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 33A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Power Field-Effect Transistor, 33A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN |
| 厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) |
| 包装说明 | , | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknow |
| 配置 | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 表面贴装 | YES | YES | YES |
| 零件包装代码 | - | TO-252 | TO-252 |
| 针数 | - | 4 | 4 |
| ECCN代码 | - | EAR99 | EAR99 |
| 外壳连接 | - | DRAIN | DRAIN |
| 最小漏源击穿电压 | - | 30 V | 30 V |
| 最大漏极电流 (ID) | - | 33 A | 33 A |
| 最大漏源导通电阻 | - | 0.0065 Ω | 0.0065 Ω |
| JEDEC-95代码 | - | TO-252 | TO-252 |
| JESD-30 代码 | - | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | - | 1 | 1 |
| 端子数量 | - | 2 | 2 |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | SMALL OUTLINE | SMALL OUTLINE |
| 最大脉冲漏极电流 (IDM) | - | 100 A | 100 A |
| 认证状态 | - | Not Qualified | Not Qualified |
| 端子形式 | - | GULL WING | GULL WING |
| 端子位置 | - | SINGLE | SINGLE |
| 晶体管应用 | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
