CREAT BY ART
MBR735 - MBR7150
7.5 AMPS. Schottky Barrier Rectifiers
TO-220AC
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.85 grams
Ordering Information(example)
Part No.
MBR735
Package
TO-220AC
Packing
50 / TUBE
Packing
code
D0
Green Compound
Packing code
D0G
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=7.5A, T
A
=25℃
IF=7.5A, T
A
=125℃
IF=15A, T
A
=25℃
IF=15A, T
A
=125℃
Maximum Instantaneous Reverse Current @ T
A
=25
℃
at Rated DC Blocking Voltage
@ T
A
=125
℃
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
MBR
735
35
24
35
MBR
745
45
31
45
MBR
750
50
35
50
MBR
760
60
42
60
7.5
15
150
MBR
790
90
63
90
MBR
7100
100
70
100
MBR
7150
150
105
150
Units
V
V
V
A
A
A
1.0
-
0.75
0.65
-
-
0.1
15
360
10
10000
280
5
15
- 65 to + 150
- 65 to + 175
0.5
0.92
0.82
-
-
5
200
160
O
A
0.95
0.92
-
-
mA
V/us
pF
C/W
O
O
V
F
0.57
0.84
0.72
V
I
R
dV/dt
Cj
R
θJC
R
θJA
T
J
T
STG
C
C
Version:H12
RATINGS AND CHARACTERISTIC CURVES (MBR735 THRU MBR7150)
FIG.1- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
10
8
6
4
2
0
0
50
100
150
CASE TEMPERATURE (
o
C)
MBR735-MBR745
MBR750-MBR7150
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
175
150
125
100
75
50
25
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3mS Single Half Sine Wave
JEDEC Method
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD
A
CURRENT (A)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISRICS
100
Pulse Width=300uS
1% Duty Cycle
INSTANTANEOUS FORWARD CURRENT (A)
10
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
100
MBR735-745
MBR750-7150
INSTANTANEOUS REVERSE CURRENT (mA)
10
TA=125℃
1
TA=125℃
1
TA=25℃
0.1
TA=75℃
0.1
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
0.01
TA=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
10000
JUNCTION CAPACITANCE (pF)
A
TA=25℃
f=1.0MHz
Vsig=50mVp-p
1000
1
1.1 1.2
100
100
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
10
0.1
1
10
100
REVERSE VOLTAGE (V)
TRANSIENT THERMAL
IMPEDANCE (℃/W)
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION. (sec)
Version:H12
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