DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66
参数名称 | 属性值 |
厂商名称 | SK Hynix(海力士) |
包装说明 | TSSOP, TSSOP66,.46 |
Reach Compliance Code | compli |
最长访问时间 | 0.75 ns |
最大时钟频率 (fCLK) | 125 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 2,4,8 |
JESD-30 代码 | R-PDSO-G66 |
内存密度 | 536870912 bi |
内存集成电路类型 | DDR DRAM |
内存宽度 | 16 |
端子数量 | 66 |
字数 | 33554432 words |
字数代码 | 32000000 |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 32MX16 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSSOP |
封装等效代码 | TSSOP66,.46 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
电源 | 2.5 V |
认证状态 | Not Qualified |
刷新周期 | 8192 |
连续突发长度 | 2,4,8 |
最大待机电流 | 0.01 A |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | GULL WING |
端子节距 | 0.635 mm |
端子位置 | DUAL |
HY5DU121622CT-L | HY5DU12422CLT-D43 | HY5DU121622CLT-D43 | HY5DU121622CLT-J | HY5DU121622CLT-K | HY5DU121622CLT-L | HY5DU121622CT-D43 | HY5DU12822CLT-H | HY5DU12822CT-J | |
---|---|---|---|---|---|---|---|---|---|
描述 | DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 | DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66 |
包装说明 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 | TSSOP, TSSOP66,.46 |
Reach Compliance Code | compli | compliant | compli | compli | compli | compli | compli | compliant | compliant |
最长访问时间 | 0.75 ns | 0.7 ns | 0.7 ns | 0.7 ns | 0.75 ns | 0.75 ns | 0.7 ns | 0.75 ns | 0.7 ns |
最大时钟频率 (fCLK) | 125 MHz | 200 MHz | 200 MHz | 166 MHz | 133 MHz | 125 MHz | 200 MHz | 133 MHz | 166 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
JESD-30 代码 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 |
内存密度 | 536870912 bi | 536870912 bit | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bi | 536870912 bit | 536870912 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 16 | 4 | 16 | 16 | 16 | 16 | 16 | 8 | 8 |
端子数量 | 66 | 66 | 66 | 66 | 66 | 66 | 66 | 66 | 66 |
字数 | 33554432 words | 134217728 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 67108864 words | 67108864 words |
字数代码 | 32000000 | 128000000 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 | 64000000 | 64000000 |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 32MX16 | 128MX4 | 32MX16 | 32MX16 | 32MX16 | 32MX16 | 32MX16 | 64MX8 | 64MX8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP | TSSOP |
封装等效代码 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
电源 | 2.5 V | 2.6 V | 2.6 V | 2.5 V | 2.5 V | 2.5 V | 2.6 V | 2.5 V | 2.5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
连续突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
标称供电电压 (Vsup) | 2.5 V | 2.6 V | 2.6 V | 2.5 V | 2.5 V | 2.5 V | 2.6 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | - | - |
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