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H07N60F

产品描述600V 7A N沟道功率场效应晶体管
产品类别分立半导体   
文件大小79KB,共5页
制造商台湾华昕(HSMC)
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H07N60F概述

600V 7A N沟道功率场效应晶体管

功能特点

产品名称:600V 7A N沟道功率场效应晶体管


N-Channel Power Field Effect Transistor


产品型号:H07N60F



产品描述:


The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.



产品特征:


Robust High Voltage Termination


Avalanc he Energy Specified


Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode


Diode is Characterized for Use in Bridge Circuits


IDSS and VDS(ON)Specified at Elevated Temperature



参数:


Channel 频道: N


VDSS 电压:600V


ID 电流: 7A


VGS 启动电压: ±30V


RDS(on)Max.导通电阻:1.2ohm


RDS(on) @VGS : 10V


RDS(on) @ID:3.5A


ROSH :PF(无铅)


Package:TO-220FP


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