电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5523D

产品描述Diode Zener Single 5.1V 1% 400mW 2-Pin DO-35
产品类别分立半导体    二极管   
文件大小74KB,共1页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
下载文档 详细参数 全文预览

1N5523D在线购买

供应商 器件名称 价格 最低购买 库存  
1N5523D - - 点击查看 点击购买

1N5523D概述

Diode Zener Single 5.1V 1% 400mW 2-Pin DO-35

1N5523D规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
Reach Compliance Codeunknow
Base Number Matches1

文档预览

下载PDF文档
<zS&mi-Condu<<k
oi
i,
fi
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N5518thru 1N5546
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
• LOW REVERSE LEAKAGE CHARACTERISTICS
• LOW NOISE CHARACTERISTICS
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
'ZM
»
4 >-
at*/ on
I
i.Hvftt
JEDEC
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
V
z
ai2T
(NOTE 2)
VOLTS
ZENER
TEST
CURRENT
'rr
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT 8 IZT
(NOTE 3)
OHMS
MAXIMUM REVERSE
LEAKAGE CURRENT
B-C-D SUFFIX
MAX. NOISE
DENSITY
@
1
Z-25<Vl A
REGULATION
FACTOR
1V
Z
(NOTE
SI
LOW
v
z
CURRENT
'ZL
>R
(NOTE 4)
V
R
. VOLTS
NON & A-
ND
n vi
VHZ"
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
S.O
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
PttMlTT
ICirHMUl
.
ISO/ -170
3.W/4.S2
H
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0,01
0.01
0.01
0.01
0.01
0.01
0.01
SUFFIX
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
B-C-0-
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
mAdc
VOLTS
mAdc
1N5518B
1N5519B
1N5520B
1N5521B
1N5522B
1N5523B
1N5524B
1N5525B
1N5526B
1N5527B
1N5528B
1N5529B
1N5530B
1N5531B
1N5532B
1N5533B
1N5534B
1N5535B
1N5536B
1N5537B
1N5538B
1N5539B
1N5540B
1N5541B
1N5542B
1N5543B
1N5544B
1N5545B
1N5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
26
24
22
M
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0-05
0-05
0.05
0.1D
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0,30
0.35
0.40
0,45
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0011/0022
04««U1
T»-«
OIA
Ml limimitm in
INCH
mm
FIGU
RE1
DESIGN DAI
r
A
CASE: Hermeticall y sealed glass
le.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESIST;*NCE: (RSJEC):
250 'C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZQJX): 35
'C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
050
NOTE1
No Suffix type numbers are ±20% with guaranteed limits for only V£, IR, and Vp. Units
with "A" suffix are ±10% with guaranteed limits for V£, IR, and Vp Units with guaranteed limits for
all six parameters are indicated by a "B" suffix for ±5.0% units, "C" suffix for ±2.0% and "D" suffix
for ±1.0%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C ± 3°C.
Zener impedance is derived by superimposing on 177- A60Hz rms a.c. current equal to 10% of IZT.
Reverse leakage currents are measured at VR as shown on the table.
NOTE 2
NOTE 3
NOTE 4
NOTES
AVZ is the maximum difference between VZ at IZT and V£ at I^L measured with
the device junction in thermal equilibrium at the ambient temperature of +25°C ±3°C.
NI .S'emM. nnJucloo re»«rv«i the rig/H in ihangr
lot
condition!, parameter limito ,md pickag* dimension* withotrt notic*
lnfn«nalion liimnrwd by NI S«mK undlKIwi il Wfeved to h« hold UKuralt and rdluM* .11 Ifw lime of guinf lit preu. However S I
'iciiii-t1 iiJutlnn nMiiiMi IHI wpniuibiiily Kir :iny «ri"« >>r I>IIMV<MMH Jiiuivurrd in in ifre N.I Seim-4. viiiJiKli-r* oi
. ir.ri j'tr'i hi wi'l'» 'h it l:il:v-h..fii ire^iirreiwh«frfi: phxini) •

推荐资源

热门文章更多

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1969  1607  374  2884  386  40  33  8  59  37 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved