Newly-developed thin package enables producing slim-electronics products
2A/3A type Schottky Barrier Diode MA24D50/60
Overview
This newly developed 2A/3A type schottky barrier diode is suitable
for on-board power supplies and power unit of mobile devices. As
the height (h) of the package was decreased by sixty percent of the
conventional NMiniP2 package, it will drastically contribute to the
downsizing of the customer's set-products.
Unit : mm
2.40
±0.10
1
0.15
±0.05
Feature
•
With its unique wireless bonding structure, assures high surge
resistance (IFSM=60A)
Newly developed low-height package.
NMiniP2：h<2.15mm max
⇒
TMiniP2:h<0.9mm max.
2
1.75
±0.05
3.80
±0.05
4.70
±0.10
5˚
0.90MAX
0 to 0.40
High-frequency wave rectification of switching power supplies
Prevention of reverse current from the batteries in the mobile devices
0 to 0.03
Applications
0.450
±0.05
TMiniP2-F1
Main Specifications
Absolute Maximum Rating (Ta=25℃)
Parameter
Reverse voltage
Peak reverse voltage
Forward current (Average)
MA24D60
MA24D50
Non-repetitive peak forward surge current*1
Junction temperature
Storage temperature
I
FSM
T
j
T
stg
Symbol
V
R
V
RM
I
F(AV)
Rating
40
40
2
3
60
150
-40 to +150
Unit
V
V
A
A
A
℃
℃
Note）*1 : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics (Ta=25℃)
Part Number
MA24D60
MA24D50
Forward voltage
V
F
(max) at I
F (AV)
Reverse current
I
R
(max) at V
R
=40V
Terminal capacitance
Ct (typ)
90 pF
105 pF
Type
Low V
F
/ Low I
R
Low V
F
/ Low I
R
0.48 V
0.51 V
200
µA
200
µA
Products and specifications are subject to change without notice.
Please ask for the latest Product Standards to guarantee the satisfaction
of your product requirements.
,
New publication, effective from 18 Nov. 2005
M00711AE
1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan
Tel. +81-75-951-8151
http://panasonic.co.jp/semicon
5˚
嵌入式系统
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