RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
参数名称 | 属性值 |
厂商名称 | Mitsubishi(日本三菱) |
包装说明 | FLANGE MOUNT, R-CDFM-F2 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
外壳连接 | SOURCE |
配置 | SINGLE WITH BUILT-IN RESISTOR |
最大漏极电流 (ID) | 5.6 A |
FET 技术 | JUNCTION |
最高频带 | X BAND |
JESD-30 代码 | R-CDFM-F2 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | DEPLETION MODE |
最高工作温度 | 175 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
最小功率增益 (Gp) | 6.5 dB |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | FLAT |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE |
MGFX38V9500-51 | MGFX38V0510-51 | MGFX38V1722-51 | MGFX38V0005-51 | MGFX38V9095-51 | |
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描述 | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET |
包装说明 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 |
Reach Compliance Code | unknow | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
最大漏极电流 (ID) | 5.6 A | 5.6 A | 5.6 A | 5.6 A | 5.6 A |
FET 技术 | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
最高频带 | X BAND | X BAND | X BAND | X BAND | X BAND |
JESD-30 代码 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最小功率增益 (Gp) | 6.5 dB | 6 dB | 5.5 dB | 6.5 dB | 6.5 dB |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES |
端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
厂商名称 | Mitsubishi(日本三菱) | - | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) |
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