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Datasheet> 器件分类 > 分立半导体> 晶体管> MGFX38V0005-51

MGFX38V0005-51: 产品描述RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET; 产品类别分立半导体晶体管; 文件大小300KB，共6页; 制造商Mitsubishi(日本三菱); 官网地址http://www.mitsubishielectric.com/semiconductors/

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MGFX38V0005-51概述

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

MGFX38V0005-51规格参数

参数名称	属性值
厂商名称	Mitsubishi(日本三菱)
包装说明	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	SOURCE
配置	SINGLE WITH BUILT-IN RESISTOR
最大漏极电流 (ID)	5.6 A
FET 技术	JUNCTION
最高频带	X BAND
JESD-30 代码	R-CDFM-F2
元件数量	1
端子数量	2
工作模式	DEPLETION MODE
最高工作温度	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最小功率增益 (Gp)	6.5 dB
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE

MGFX38V0005-51相似产品对比

	MGFX38V0005-51	MGFX38V0510-51	MGFX38V1722-51	MGFX38V9095-51	MGFX38V9500-51
描述	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
包装说明	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最大漏极电流 (ID)	5.6 A	5.6 A	5.6 A	5.6 A	5.6 A
FET 技术	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
最高频带	X BAND	X BAND	X BAND	X BAND	X BAND
JESD-30 代码	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2
元件数量	1	1	1	1	1
端子数量	2	2	2	2	2
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最小功率增益 (Gp)	6.5 dB	6 dB	5.5 dB	6.5 dB	6.5 dB
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
厂商名称	Mitsubishi(日本三菱)	-	Mitsubishi(日本三菱)	Mitsubishi(日本三菱)	Mitsubishi(日本三菱)

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