AP09N20H/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristics
▼
RoHS Compliant
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
200V
380mΩ
8.6A
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP09N20J) is available for low-profile
applications.
G
D S
TO-252(H)
G
D S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
200
+30
8.6
5.5
36
69
0.55
40
8.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.8
110
Unit
℃/W
℃/W
Data & specifications subject to change without notice
1
200809112
AP09N20H/J-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
Min.
200
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.24
-
-
3.7
-
-
-
23
4
13
12
25
36
16
500
90
40
Max. Units
-
-
380
4
-
10
100
+100
37
-
-
-
-
-
-
800
-
-
V
V/℃
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS
=0V, I
D
=1mA
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=10V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=200V, V
GS
=0V
V
GS
= +30V
I
D
=8.6A
V
DS
=160V
V
GS
=10V
V
DD
=100V
I
D
=8.6A
R
G
=10Ω,V
GS
=10V
R
D
=11.6Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=160V
,
V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=8.6A.
Parameter
Forward On Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=8.6A, V
GS
=0V
I
S
=8.6A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
225
2260
Max. Units
1.3
-
-
V
ns
nC
3.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09N20H/J-HF
18
10
16
T
C
=25 C
o
10V
8.0V
8
T
C
=150
o
C
I
D
, Drain Current (A)
I
D
, Drain Current (A)
14
10V
8.0V
7.0V
12
7.0V
6
10
8
4
6
4
5.0V
5.0V
2
2
V
G
=4.0V
0
0
2
4
6
8
10
12
0
2
4
6
8
V
G
=4.0V
0
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
2.8
2.4
1.4
I
D
=5A
V
GS
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
-50
0
50
100
150
2
1.2
1.6
1.2
1
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
7
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
6
4
5
4
V
GS(th)
(V)
T
j
=150
o
C
T
j
=25
o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
I
S
(A)
3
3
2
2
1
0
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09N20H/J-HF
15
1000
f=1.0MHz
I
D
=8.6A
V
GS
, Gate to Source Voltage (V)
12
V
DS
=100V
V
DS
=120V
V
DS
=160V
C (pF)
100
C
iss
9
C
oss
C
rss
6
3
0
0
6
12
18
24
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
10
0.2
I
D
(A)
1ms
0.1
0.1
10ms
1
0.05
P
DM
t
0.02
100ms
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
T
c
=25
o
C
Single Pulse
0
1
10
100
DC
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
SYMBOLS
Millimeters
MIN
NOM
MAX
A2
A3
B1
D
D1
E3
1.80
0.40
0.40
6.00
4.80
3.50
2.20
0.50
5.10
0.50
--
0.35
2.30
0.50
0.70
6.50
5.35
4.00
2.63
0.85
5.70
1.10
2.30
0.50
2.80
0.60
1.00
7.00
5.90
4.50
3.05
1.20
6.30
1.80
--
0.65
E2
E3
E1
F
F1
E1
E2
e
C
B1
F1
F
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
e
A2
R : 0.127~0.381
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part
09N20H
Package Code
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5
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