Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | DSBGA |
| 包装说明 | TFBGA, BGA90,9X15,32 |
| 针数 | 90 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.4 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 133 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 1,2,4,8 |
| JESD-30 代码 | R-PBGA-B90 |
| JESD-609代码 | e1 |
| 长度 | 13 mm |
| 内存密度 | 134217728 bi |
| 内存集成电路类型 | SYNCHRONOUS DRAM |
| 内存宽度 | 32 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 90 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 4MX32 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TFBGA |
| 封装等效代码 | BGA90,9X15,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 1.8 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 连续突发长度 | 1,2,4,8,FP |
| 最大待机电流 | 0.000015 A |
| 最大压摆率 | 0.14 mA |
| 最大供电电压 (Vsup) | 1.95 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 |
| 宽度 | 8 mm |
| IS42VM32400E-75BLI | IS42VM16800E-75BLI | IS42VM16800E-75BLI-TR | IS45VM16800E-75BLA1 | IS45VM16800E-75BLA2 | |
|---|---|---|---|---|---|
| 描述 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 | IC SDRAM 128MBIT 133MHZ 54BGA | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | TFBGA, BGA90,9X15,32 | TFBGA, BGA54,9X9,32 | BGA-54 | TFBGA, BGA54,9X9,32 | TFBGA, BGA54,9X9,32 |
| Reach Compliance Code | compli | compliant | unknown | compliant | compliant |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B90 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 |
| 长度 | 13 mm | 8 mm | 8 mm | 8 mm | 8 mm |
| 内存密度 | 134217728 bi | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 32 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 90 | 54 | 54 | 54 | 54 |
| 字数 | 4194304 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
| 字数代码 | 4000000 | 8000000 | 8000000 | 8000000 | 8000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 105 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 4MX32 | 8MX16 | 8MX16 | 8MX16 | 8MX16 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装形状 | RECTANGULAR | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 最大供电电压 (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
| 是否Rohs认证 | 符合 | 符合 | - | 符合 | 符合 |
| 零件包装代码 | DSBGA | BGA | - | BGA | BGA |
| 针数 | 90 | 54 | - | 54 | 54 |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 |
| 最大时钟频率 (fCLK) | 133 MHz | 133 MHz | - | 133 MHz | 133 MHz |
| I/O 类型 | COMMON | COMMON | - | COMMON | COMMON |
| 交错的突发长度 | 1,2,4,8 | 1,2,4,8 | - | 1,2,4,8 | 1,2,4,8 |
| 输出特性 | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE |
| 封装等效代码 | BGA90,9X15,32 | BGA54,9X9,32 | - | BGA54,9X9,32 | BGA54,9X9,32 |
| 电源 | 1.8 V | 1.8 V | - | 1.8 V | 1.8 V |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | - | 4096 | 4096 |
| 自我刷新 | YES | YES | - | YES | YES |
| 连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | - | 1,2,4,8,FP | 1,2,4,8,FP |
| 最大待机电流 | 0.000015 A | 0.000015 A | - | 0.000015 A | 0.000015 A |
| 最大压摆率 | 0.14 mA | 0.15 mA | - | 0.15 mA | 0.15 mA |
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