Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Hi-Tron Semiconductor Corp |
| 零件包装代码 | TO-22 |
| 包装说明 | CYLINDRICAL, R-XBCY-W3 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| 最大集电极电流 (IC) | 0.025 A |
| 配置 | Single |
| 最小直流电流增益 (hFE) | 13 |
| JESD-30 代码 | R-XBCY-W3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 175 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.15 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 12 MHz |
| 2N1149 | 2N1150 | 2N1154 | 2N117 | 2N118 | 2N335 | 2N337 | 2N338 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp |
| 零件包装代码 | TO-22 | TO-22 | TO-22 | TO-22 | TO-22 | TO-5 | TO-5 | TO-5 |
| 包装说明 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| 针数 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| 最大集电极电流 (IC) | 0.025 A | 0.025 A | 0.06 A | 0.025 A | 0.025 A | 0.025 A | 0.02 A | 0.02 A |
| 配置 | Single | Single | Single | Single | Single | Single | Single | Single |
| 最小直流电流增益 (hFE) | 13 | 24 | 19 | 15 | 29 | 36 | 55 | 80 |
| JESD-30 代码 | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 175 °C | 175 °C | 150 °C | 175 °C | 175 °C | 175 °C | 150 °C | 150 °C |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.15 W | 0.15 W | 0.75 W | 0.15 W | 0.15 W | 0.15 W | 0.125 W | 0.125 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 12 MHz | 13 MHz | 1 MHz | 4 MHz | 5 MHz | 6 MHz | 20 MHz | 30 MHz |
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