SEMICONDUCTOR
RoHS
55PT Series
RoHS
Stansard SCRs, 55A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
55
600 to 1600
80
Unit
A
V
mA
1
2
1
3
2
3
2
TO-220AB
(non-Insulated)
(55PTxxA)
A2
TO-220AB
(lnsulated)
(55PTxxAI)
DESCRIPTION
The 55PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
and high power motor control.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500V
RMS
).
A1 A2
G
A1 A2
G
A1 A2 G
TO-3P
(non-Insulated)
(55PTxxB)
TO-3P
(Insulated)
(55PTxxBI)
A2
1
2
3
2
(A2)
TO-263
(D
2
PAK)
(55PTxxH)
TO-247AB
(non-Insulated)
(55PTxxC)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
SYMBOL
TEST CONDITIONS
TO-3P/TO-247AB
I
T(RMS)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
V
D
= 67% V
DRM
, t
p
= 200μs, I
G
= 0.3A
d
IG
/dt = 0.3A/μs
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
V
RGM
T
j
=125ºC
600
to 1600
- 40
to
+ 150
ºC
- 40
to
+ 125
5
V
V
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
5
10
2
A
W
W
TO-3P/TO-247AB
I
T(AV)
TO-220AB/TO-263
TO-220AB insulated/TO-3P insulated
I
TSM
I
2
t
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
c
=85°C
T
c
=80°C
T
c
=70°C
T
c
=85°C
T
c
=80°C
T
c
=70°C
t = 20 ms
t = 16.7 ms
520
540
1352
A
A
2
s
35
A
55
A
VALUE
UNIT
dI/dt
F = 60 Hz
T
j
= 125ºC
150
A/µs
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Page 1 of 5
SEMICONDUCTOR
RoHS
55PT Series
RoHS
(T
J
= 25 ºC unless otherwise specified)
55PT06xx
55PT10xx
55PT16xx
55PT08xx
55PT12xx
40
1.5
0.2
80
100
700
100
130
1000
1.6
10
6
1.02
85
120
150
1000
80
mA
V
V
mA
mA
V/µs
V
µA
mA
V
mΩ
Max.
30
Unit
TEST CONDITIONS
ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
D
= 12V, R
L
= 33Ω
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
I
DRM
I
RRM
V
to
R
d
Max.
V
D
= V
DRM
, R
L
= 3.3K
Ω,
R
GK
= 220Ω
I
T
= 500mA, Gate open
I
G
= 1.2
×
I
GT
V
D
= 67% V
DRM
, Gate open
I
T
= 80A, t
P
= 380µs
V
D
=V
DRM
, V
R
=V
RRM
R
GK
= 220Ω
Threshold Voltage
Dynamic Resistance
T
j
= 125°C
Min.
Max.
Max.
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
Max.
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(DC)
S = 1 cm
2
R
th(j-a)
Junction to ambient
Parameter
D
2
PAK/TO-220AB/TO-3P/TO-247AB
TO-220AB insulated/TO-3P insulated
TO-263( D
2
PAK)
TO-220AB/TO-220AB insulated
TO-3P/TO-247AB/TO-3P insulated
S=Copper surface under tab
VALUE
0.8
°C/W
0.9
45
60
50
°C/W
UNIT
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
55PTxxA/55PTxxAl
55PTxxH
55PTxxB/55PTxxBI
55PTxxC
V
V
V
V
800
V
V
V
V
V
1000
V
V
V
V
V
1200
V
V
V
V
V
1600
V
V
V
V
V
80
mA
80
mA
80
mA
80
mA
TO-220AB
D
2
PAK
TO-3P
TO-247AB
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
55PTxxA
55PTxxAI
55PTxxH
55PTxxB
55PTxxBI
55PTxxC
Note:
xx
=
voltage
MARKING
55PTxxA
55PTxxAI
55PTxxH
55PTxxB
55PTxxBI
55PTxxC
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-263(D
2
PAK)
TO-3P
TO-3P insulated
TO-247AB
WEIGHT
2.0g
2.3g
2.0g
4.3g
4.8g
5g
BASE Q,TY
50
50
50
30
30
30
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
Tube
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Page 2 of 5
SEMICONDUCTOR
RoHS
55PT Series
RoHS
ORDERING INFORMATION SCHEME
55 PT 06
Current
55 = 55A,
I
T(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
B
=
TO-3P (non-insulated)
BI
=
TO-3P ( insulated)
C = TO-247AB
H = TO-263 (D
2
PAK)
Fig.1 Maximum power dissipation versus
average on-state current (half cycle)
P(W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
60
55
50
45
40
35
30
25
20
15
10
Fig.2 RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
TO-3P
TO-247AB
TO-220AB insulated
TO-3P insulated
TO-220AB
TO-263
l
T(AV)
(A)
5
0
0
25
50
75
100
125
Fig.3 On-state characteristics
(maximum values).
Fig.4 Surge peak on-state current versus
number of cycles.
100
I
TM
(A)
T
j
max.
Vo
= 1.02
V
Rd
= 85
mΩ
550
500
450
T
j
=T
j
max
I
TSM
(A)
t=10ms
Half cycle
400
350
Non repetitive
T
j
initial=25°C
10
T
j
=25
°
C
300
250
200
150
100
V
TM
(V)
1
0
0.5
1.0
1.5
2.0
2.5
50
0
Number of cycles
1
10
100
1000
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Page 3 of 5
SEMICONDUCTOR
RoHS
55PT Series
RoHS
Fig.5 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
value of l
2
t .
Fig.6 Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
(typical values)
I
TSM
(A),
l
2
t
(A
2
s)
10000
T
j
initial=25°C
3.0
2.5
dI/dt
≤
150A/µs
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.0
I
TSM
I
2
t
1000
1.5
1.0
t=10ms
Half cycle
l
GT
l
H
&l
L
0.5
tp
(ms)
T
j
(°C)
0.0
1.0
10.0
-40
-20
0
20
40
60
80
100
120
140
100
0.01
0.1
Case Style
TO-220AB
10.54 (0.415)
MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
16.13 (0.635)
15.87 (0.625)
3
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
1
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
PIN
2
2
(A2)
(G)3
1(A1)
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Page 4 of 5
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