AP04N80I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
800V
4.5Ω
3.2A
Description
AP04N80 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
TO-220CFM type provide high blocking voltage to overcome
voltage surge and sag in the toughest power system with the best
combination of fast switching, ruggedized design and cost-
effectiveness.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
800
+30
3.2
1.7
12
34.7
3
Units
V
V
A
A
A
W
mJ
℃
℃
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
4.5
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.6
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201310235
AP04N80I-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=1A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1A
V
DS
=640V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=1A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=1A
R
G
=50Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
800
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
2
-
-
18
3.8
6
15
20
105
30
800
55
4
3.6
Max. Units
-
4.5
4
-
100
+100
-
-
-
-
-
-
-
1280
-
-
7.2
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
o
3.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω, I
AS
=3A
Parameter
Forward On Voltage
2
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=1A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
320
1.3
Max. Units
1.5
-
-
V
ns
µC
Reverse Recovery Time
Reverse Recovery Charge
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP04N80I-HF
4
2
T
C
=25 C
I
D
, Drain Current (A)
o
3
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
V
G
=6.0V
T
C
=150
o
C
2
10V
9.0V
8.0V
7.0V
V
G
=6.0V
1
2
1
1
0
0
0
8
16
24
32
0
0
8
16
24
32
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
3
I
D
=1mA
1.6
I
D
=1A
V
G
=10V
Normalized R
DS(ON)
Normalized BV
DSS
2
1.2
0.8
1
0.4
0
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
4
1.6
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
I
D
=1mA
1.4
3
Normalized V
GS(th)
I
S
(A)
o
T
j
= 150 C
T
j
= 25 C
o
1.2
2
1
0.8
1
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP04N80I-HF
12
1200
f=1.0MHz
I
D
=1A
V
GS
, Gate to Source Voltage (V)
10
1000
V
DS
=480V
8
800
C
iss
6
C (pF)
600
4
400
2
200
0
0
4
8
12
16
20
24
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS ,
Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
100us
1
0.1
0.1
0.05
1ms
10ms
0.1
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
c
=25
o
C
Single Pulse
0.01
1
10
100
1000
100ms
1s
DC
Single Pulse
0.01
10000
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
