Dual-Port SRAM, 64KX18, 9ns, PQFP128, TQFP-128
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | QFP |
| 包装说明 | LFQFP, |
| 针数 | 128 |
| Reach Compliance Code | _compli |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 9 ns |
| 其他特性 | SELF-TIMED WRITE CYCLE |
| JESD-30 代码 | R-PQFP-G128 |
| JESD-609代码 | e0 |
| 长度 | 20 mm |
| 内存密度 | 1179648 bi |
| 内存集成电路类型 | DUAL-PORT SRAM |
| 内存宽度 | 18 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端子数量 | 128 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 64KX18 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | LFQFP |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK, LOW PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 240 |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.6 mm |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子节距 | 0.5 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 14 mm |
| IDT70V9389S9PRF | IDT70V9389SPRFI | IDT70V9389LPRFI | IDT70V9389S12PRF | IDT70V9389S7PRF | |
|---|---|---|---|---|---|
| 描述 | Dual-Port SRAM, 64KX18, 9ns, PQFP128, TQFP-128 | Dual-Port SRAM, 64KX18, PQFP128, TQFP-128 | Dual-Port SRAM, 64KX18, PQFP128, TQFP-128 | Dual-Port SRAM, 64KX18, 12ns, PQFP128, TQFP-128 | Dual-Port SRAM, 64KX18, 7ns, PQFP128, TQFP-128 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | QFP | QFP | QFP | QFP | QFP |
| 包装说明 | LFQFP, | LFQFP, | LFQFP, | LFQFP, | LFQFP, |
| 针数 | 128 | 128 | 128 | 128 | 128 |
| Reach Compliance Code | _compli | compliant | compliant | not_compliant | not_compliant |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| JESD-30 代码 | R-PQFP-G128 | R-PQFP-G128 | R-PQFP-G128 | R-PQFP-G128 | R-PQFP-G128 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm |
| 内存密度 | 1179648 bi | 1179648 bit | 1179648 bit | 1179648 bit | 1179648 bit |
| 内存集成电路类型 | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM | DUAL-PORT SRAM |
| 内存宽度 | 18 | 18 | 18 | 18 | 18 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 128 | 128 | 128 | 128 | 128 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 70 °C | 70 °C |
| 组织 | 64KX18 | 64KX18 | 64KX18 | 64KX18 | 64KX18 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LFQFP | LFQFP | LFQFP | LFQFP | LFQFP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK, LOW PROFILE, FINE PITCH | FLATPACK, LOW PROFILE, FINE PITCH | FLATPACK, LOW PROFILE, FINE PITCH | FLATPACK, LOW PROFILE, FINE PITCH | FLATPACK, LOW PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 240 | 240 | 240 | 240 | 240 |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm | 0.5 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 |
| 宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
| 厂商名称 | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 最长访问时间 | 9 ns | - | - | 12 ns | 7 ns |
| 其他特性 | SELF-TIMED WRITE CYCLE | - | - | SELF-TIMED WRITE CYCLE | SELF-TIMED WRITE CYCLE |
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