电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

30CTQS

产品描述30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA
产品类别半导体    分立半导体   
文件大小107KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 全文预览

30CTQS概述

30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA

文档预览

下载PDF文档
30CTQ...S/30CTQ...-1
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
30CTQ...S
30CTQ...-1
FEATURES
• 175 °C T
J
operation
• Center tap TO-220 package
• Very low forward voltage drop
Base
common
cathode
2
Base
common
cathode
2
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• Designed and qualified for Q101 level
DESCRIPTION
The 30CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
35 to 45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
35 to 45
1060
0.56
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
30CTQ035S
30CTQ035-1
35
30CTQ040S
30CTQ040-1
40
30CTQ045S
30CTQ045-1
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 127 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
1060
265
20
3.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 3.0 A, L = 4.40 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93957
Revision: 06-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 741  2591  813  2141  1469  37  10  49  54  35 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved