25TTS... High Voltage Series
Vishay High Power Products
Phase Control SCR, 25 A
2
(A)
DESCRIPTION/FEATURES
The 25TTS... High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
TO-220AB
1 (K) (G) 3
PRODUCT SUMMARY
V
T
at 16 A
I
TSM
V
RRM
< 1.25 V
300 A
800/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
18
THREE-PHASE BRIDGE
22
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
16 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
16
25
800/1200
300
1.25
500
150
- 40 to 125
UNITS
A
V
A
V
V/µs
A/µs
°C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
I
RRM
/I
DRM
AT 125 °C
mA
10
25TTS08
25TTS12
Document Number: 93702
Revision: 19-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
25TTS... High Voltage Series
Vishay High Power Products
Phase Control SCR, 25 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
√t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
C
= 93 °C, 180° conduction half sine wave
VALUES
TYP.
16
25
300
350
450
630
6300
1.25
12.0
1.0
V
R
= Rated V
RRM
/V
DRM
-
200
500
150
V/µs
A/µs
0.5
10
100
mA
A
2
s
A
2
√s
V
mΩ
V
A
MAX.
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A
Anode supply = 6 V, resistive load
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
µs
UNITS
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93702
Revision: 19-Jun-08
25TTS... High Voltage Series
Phase Control SCR, 25 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 125
1.1
62
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
25TTS08
25TTS12
Document Number: 93702
Revision: 19-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
25TTS... High Voltage Series
Vishay High Power Products
Phase Control SCR, 25 A
130
35
Maximum Average On-State
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
25TTS.. Series
R
thJC
(DC) = 1.1 °C/W
120
30
25
20
15
10
5
0
DC
180°
120°
90°
60°
30°
RMS limit
Ø
110
Conduction angle
Ø
100
90°
30°
90
0
5
10
60°
180°
Conduction period
25TTS.. Series
T
J
= 125 °C
0
5
10
15
20
25
30
120°
15
20
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
130
350
25TTS.. Series
R
thJC
(DC) = 1.1 °C/W
At any rated load condition and
with
rated
V
RRM
applied following surge
Maximum Allowable Case
Temperature (°C)
120
Peak Half Sine Wave
On-State Current (A)
300
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
110
Ø
Conduction period
250
100
30°
60°
120°
90°
80
0
5
10
15
20
25
30
180°
DC
200
25TTS.. Series
150
1
10
100
90
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
25
400
350
Maximum non-repetitive surge current
versus
pulse train duration. Control
of conduction may not
be
maintained.
Initial T
J
= 125 °C
No voltage
reapplied
Rated
V
RRM
reapplied
Maximum Average On-State
Power Loss (W)
Peak Half Sine Wave
On-State Current (A)
20
15
180°
120°
90°
60°
30°
RMS limit
300
250
200
150
100
0.01
10
Ø
Conduction angle
5
25TTS.. Series
T
J
= 125 °C
0
0
4
8
12
16
20
25TTS.. Series
0.1
1
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93702
Revision: 19-Jun-08
25TTS... High Voltage Series
Phase Control SCR, 25 A
Vishay High Power Products
Instantaneous On-State Current (A)
1000
100
T
J
= 25 °C
T
J
= 125 °C
10
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 10
V,
20
Ω
t
r
=
0.5
µs,
t
p
≥
6
µs
b)
Recommended load line for
≤
30 % rated dI/dt: 10
V,
65
Ω
t
r
=
1
µs,
t
p
≥
6
µs
T
J
= 125 °C
(1) P
GM
= 40
W,
t
p
= 1 ms
(2) P
GM
= 20
W,
t
p
= 2 ms
(3) P
GM
=
8 W,
t
p
= 5 ms
(4) P
GM
= 4
W,
t
p
= 10 ms
(a)
(b)
T
J
= 10 °C
T
J
= 25 °C
1
V
GD
I
GD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
25TTS.. Series
0.1
1
Frequency limited
by
P
G(AV)
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
10
Z
thJC
- Transient
Thermal Impedance (°C/W)
Steady state
value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
0.1
25TTS.. Series
0.001
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
Document Number: 93702
Revision: 19-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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