22RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 22 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
TO-208AA (TO-48)
RoHS
COMPLIANT
• RoHS compliant
• Designed and qualified for industrial and consumer level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
22 A
• Medium power switching
• Phase control applications
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Typical
TEST CONDITIONS
VALUES
22
T
C
85
35
400
A
420
793
724
100 to 1200
110
- 65 to 125
V
µs
°C
A
2
s
UNITS
A
°C
A
I
2
t
Document Number: 93700
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
22RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 22 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
22RIA
60
80
100
120
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
(1)
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
(2)
V
150
300
500
700
900
1100
1300
10
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
20
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2)
For voltage pulses with t
≤
5 ms
p
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
TEST CONDITIONS
180° sinusoidal conduction
VALUES
22
85
35
400
420
335
355
793
724
560
515
7930
0.83
0.95
14.9
mΩ
13.4
1.70
130
200
V
mA
A
2
√s
A
2
s
A
UNITS
A
°C
A
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
),
T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
),
T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 70 A, T
J
= 25 °C
T
J
= 25 °C, anode supply 6 V, resistive load
V
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93700
Revision: 19-Sep-08
22RIA Series
Medium Power Thyristors
Vishay High Power Products
(Stud Version), 22 A
SWITCHING
PARAMETER
V
DRM
≤
600 V
Maximum rate of rise
of turned-on current
V
DRM
≤
800 V
V
DRM
≤
1000 V
V
DRM
≤
1600 V
Typical turn-on time
Typical reverse recovery time
t
gt
t
rr
dI/dt
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
Ω,
t
p
= 6 µs, t
r
= 0.1 µs maximum
I
TM
= (2 x rated dI/dt) A
T
J
= 25 °C,
at rated V
DRM
/V
RRM
, T
J
= 125 °C
T
J
= T
J
maximum,
I
TM
= I
T(AV)
, t
p
> 200 µs, dI/dt = - 10 A/µs
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 µs, V
R
= 100 V,
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
SYMBOL
TEST CONDITIONS
VALUES
200
180
160
150
0.9
4
A/µs
UNITS
µs
Typical turn-off time
t
q
110
Note
• t
q
= 10 µs up to 600 V, t
q
= 30 µs up to 1600 V available on special request
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
100
300
(1)
UNITS
V/µs
(1)
Note
Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 22RIA120S90
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GM
TEST CONDITIONS
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= - 65 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 65 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum, V
DRM
= Rated value
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
mA
V
mA
UNITS
W
A
V
DC gate voltage not to trigger
V
GD
T
J
= T
J
maximum,
V
DRM
= Rated value
0.2
V
Document Number: 93700
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
22RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 22 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
TO NUT
20 (27.5)
Mounting torque
Lubricated threads
(Non-lubricated threads)
0.23 (0.32)
2.3 (3.1)
Approximate weight
Case style
See dimensions - link at the end of datasheet
14
0.49
TO-208AA (TO-48)
TEST CONDITIONS
VALUES
- 65 to 125
0.86
K/W
0.35
TO DEVICE
25
0.29
2.8
lbf
⋅
in
kgf · m
N·m
g
oz.
UNITS
°C
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.21
0.25
0.31
0.45
0.76
RECTANGULAR CONDUCTION
0.15
0.25
0.34
0.47
0.76
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
22RIA Series
R
thJC
(DC) = 0.86 K/W
120
130
22RIA Series
R
thJC
(DC) = 0.86 K/W
120
110
Conduction Angle
110
Conduction Period
100
30°
60°
90°
120°
180°
100
30°
60°
90°
120°
180°
DC
90
90
80
0
5
10
15
20
25
Average On-state Current (A)
80
0
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93700
Revision: 19-Sep-08
22RIA Series
Medium Power Thyristors
Vishay High Power Products
(Stud Version), 22 A
Maximum Average On-state Power Loss (W)
40
35
30
25
20
15
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
R
t
2
A
hS
K/
W
=
/W
1K
3K
/W
aR
elt
-D
4K
/W
5K
/W
7K
/W
10 K
/W
10
5
0
0
5
10
22RIA Series
T
J
= 125°C
15
20
25
0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
50
45
40
35
30
DC
180°
120°
90°
60°
30°
R
t
A
hS
2
K/
W
=
1
W
K/
a
elt
-D
25 RMS Limit
20
15
10
5
0
0
5
10
15
20
25
30
0
35
Conduction Period
3K
/W
4K
/W
R
5K
/W
7K
/W
10 K/
W
22RIA Series
T
J
= 125°C
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
375
Peak Half Sine Wave On-state Current (A)
350
325
300
275
250
225
200
175
150
1
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
400
375
350
325
300
275
250
225
200
175
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
22RIA Series
22RIA Series
10
100
150
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93700
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
