AP02N60H/J-H-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
700V
8.8Ω
1.4A
Description
G
D
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP02N60J-H-HF) is available for low-profile
applications.
G
D S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
700
+30
1.4
0.9
5.6
39
0.31
49
1.4
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
3.2
62.5
110
Units
℃/W
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
1
200807222
AP02N60H/J-H-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=10mA
Min.
700
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
0.2
-
-
-
14
2
8.5
9.5
12
21
9
155
27
14
Max. Units
-
-
8.8
4
-
10
100
+100
20
-
-
-
-
-
-
240
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=10V, I
D
=0.6A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=1A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=+30V
I
D
=1.4A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=1.4A
R
G
=10Ω,V
GS
=10V
R
D
=214Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
3
Test Conditions
I
S
=1.4A, V
GS
=0V
I
S
=1.4A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
360
1970
Max. Units
1.5
-
-
V
ns
nC
Reverse Recovery Time
3
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=50mH , R
G
=25Ω , I
AS
=1.4A.
3.Pulse test
4.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N60H/J-H-HF
1.5
0.9
T
C
=25 C
I
D
, Drain Current (A)
o
10V
6.0V
5.5V
I
D
, Drain Current (A)
0.6
T
C
=150 C
o
10V
6.0V
5.5V
1
5.0V
0.5
5.0V
0.3
V
G
= 4.5 V
V
G
= 4.5 V
0
0
5
10
15
20
0
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=0.6A
V
G
=10V
1.1
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2
1
1
0.9
0.8
0
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
100
5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
10
T
j
= 150
o
C
o
T
j
= 25 C
V
GS(th)
(V)
1.2
I
S
(A)
3
1
2
0.1
0
0.2
0.4
0.6
0.8
1
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP02N60H/J-H-HF
16
f=1.0MHz
1000
V
GS
, Gate to Source Voltage (V)
I
D
=1.4A
12
8
C (pF)
V
DS
=320V
V
DS
=400V
V
DS
=480V
C
iss
100
4
C
oss
C
rss
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
1
I
D
(A)
1ms
10ms
0.2
0.1
0.1
0.05
700
P
DM
0.1
100ms
DC
0.02
t
T
T
c
=25 C
Single Pulse
0.01
1
10
100
1000
o
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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