VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
TO-220AB
Base
common
cathode
2
TO-220 FULL-PAK
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
1
Anode
2
Common
cathode
3
Anode
1
Anode
2
Common
cathode
3
Anode
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-20CTH03PbF
VS-20CTH03-N3
VS-20CTH03FPPbF
VS-20CTH03FP-N3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-220AB, TO-220FP
2 x 10 A
300 V
1.25 V
See Recovery table
175 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
per diode
Average rectified forward current
(FULL-PAK) per diode
per device
Non-repetitive peak surge current
Operating junction and storage temperatures
I
FSM
T
J
, T
Stg
T
J
= 25 °C
I
F(AV)
SYMBOL
V
RRM
T
C
= 160 °C
T
C
= 135 °C
TEST CONDITIONS
VALUES
300
10
20
120
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 10 A
I
F
= 10 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.05
0.85
-
6
30
8
MAX.
-
1.25
0.95
20
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 02-Jan-12
Document Number: 94010
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 10 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
31
42
2.4
5.6
36
120
MAX.
35
30
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Marking device
per diode
(FULL-PAK) per diode
SYMBOL
T
J
, T
Stg
R
thJC
Mounting surface, flat, smooth
and greased
Case style TO-220AB
Case style TO-220 FULL-PAK
TEST CONDTIONS
MIN.
- 65
-
-
TYP.
-
-
-
MAX.
175
1.5
3.9
20CTH03
20CTH03FP
UNITS
°C
°C/W
100
100
T
J
= 175 °C
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
1
T
J
= 100 °C
0.1
T
J
= 75 °C
T
J
= 50 °C
0.01
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.001
50
100
150
200
250
300
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Jan-12
Document Number: 94010
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
10
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
Revision: 02-Jan-12
Document Number: 94010
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
www.vishay.com
180
20
Vishay Semiconductors
Allowable Case Temperature (°C)
Average Power Loss (W)
16
RMS limit
12
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
8
10
12
14
16
170
DC
160
Square wave (D = 0.50)
Rated V
R
applied
8
150
See note (1)
140
0
2
4
6
8
10
12
14
16
4
DC
0
0
2
4
6
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
100
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
100
0
2
4
6
8
10
12
14
16
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
10
100
V
R
= 200 V
DC
I
F
= 10 A
t
rr
(ns)
T
J
= 125 °C
T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
1000
I
F
= 10 A
dI
F
/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
Q
rr
(nC)
T
J
= 125 °C
100
T
J
= 25 °C
V
R
= 200 V
10
100
1000
dI
F
/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
(1)
Revision: 02-Jan-12
Document Number: 94010
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 02-Jan-12
Document Number: 94010
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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