SEMICONDUCTOR
16D(R)Series
Glass Passivated Standard Recovery Diodes
(Stud Version), 16A
RoHS
RoHS
N
ell
High Power Products
FEATURES
Glass passivated chips
High surge current capability
Stud cathode and stud anode version
Wide current range
Voltage up to 1600V V
RRM
RoHS compliant
TYPICAL APPLICATIONS
Battery charges
Converters
Power supplies
Machine tool controls
PRODUCT SUMMARY
I
F(AV)
16A
DO-203AA(DO-4)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
T
C
TEST CONDITIONS
VALUES
UNIT
A
ºC
16
140
25
A
A
A
2
s
V
ºC
50 HZ
60 HZ
50 HZ
60 HZ
Range
350
370
612
558
200 to 1600
-65 to 175
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
,MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
,MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
V
R(BR)
,MIMIMUM
AVALANCHE
VOLTAGE
V
(1)
V
RRM
,MAXIMUM
AT TJ=175
°
C
mA
02
04
16D( R )
200
400
600
800
1000
1200
1600
275
500
725
950
1200
1400
1800
-
500
750
950
1150
1350
1750
12
06
08
10
12
16
Note
(1) Avalanche version only available from V
RRM
400V to 1600V
Page 1 of 5
SEMICONDUCTOR
16D(R)Series
RoHS
RoHS
N
ell
High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
I
F(AV)
I
F(RMS)
P
R
(1)
TEST CONDITIONS
180
°
conduction, half sine wave
VALUES
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum on-repetitive peak
reverse power
Maximum peak, one-cycle forward,
non-reptitive surge current
16
140
25
15
350
370
295
UNIT
A
ºC
A
K/W
10 s square pulse, T
J
= T
J
maximum
t = 10 ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
I
FSM
t = 8.3 ms
t = 10 ms
t
=
8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
A
310
612
558
435
395
6125
1.25
A
2
√
s
V
Maximum l²t for fusing
I
2
t
A
2
s
Maximum l²
√
t for fusing
Maximum forward voltage drop
Note
I
√
t
V
FM
2
t = 0.1 to 10 ms, no voltage reapplied
l
pk
= 50 A, T
J
= 25˚C, t
p
= 400µs rectangular wave
(1) Avalanche only for avalanche version, all other parameters the same as 16D
THERMAL AND MECHANICAL SPECIFCATIONS
PARAMETER
SYMBOL
T
J
T
stg
R
thJC
TEST CONDITIONS
VALUES
UNITS
ºC
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistace,
junction to case
Maximum thermal resistance
case to heatsink
- 65 to175
- 65 to 200
DC operation
1.6
K/W
R
thCS
Mounting surface, smooth, flat and greased
0.5
1.5
+0
-10%
(13)
1.2
-10%
(10)
6
0.21
+0
Not lubricated threads
Allowable mounting torque
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
N
·
m
(lbf
·
in)
N
·
m
(lbf
·
in)
g
oz.
DO-203AA (DO-4)
R
thJC
CONDUCTION
CONDUCTION ANGEL
180˚
120˚
90˚
60˚
30˚
Note
• The table above shows the increment of thermal resistance R
thJC
when devices
operate at different conduction angles than DC
SINUSOIDAL CONDUCTION
0.31
0.38
0.49
0.72
1.20
RECTANGULAR CONDUCTION
0.23
0.40
0.54
0.75
1.21
TEST CONDUCTIONS
UNITS
T
J
= T
J
maximum
K/W
Page 2 of 5
SEMICONDUCTOR
16D(R)Series
Fig.2 Current Ratings Characteristics
Maximum Allowable Case Temperature(˚C)
180
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High Power Products
Fig.1 Current Ratings Characteristics
Maximum Allowable Case Temperature(˚C)
180
16D(R)Series
R
thJC
(DC)=1.6K/W
16D(R)Series
R
thJC
(DC)=1.6K/W
170
170
160
Conduction Angle
160
Conduction Period
150
150
140
60°
30°
130
0
4
8
90°
120°
180°
12
16
20
140
60°
30°
130
0
5
10
90°
120°
180°
15
20
DC
25
30
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 Forward Power Loss Characteristics
20
Maximum Average Forward Power Loss (W)
180°
120°
16
90°
60°
30°
12
RMS Limit
R
t
hS
A
6K
/W
=4
K/
W
-D
elt
8K
aR
/W
10K
/W
8
Conduction Angle
15K
/W
20K/W
4
30K/W
16D(R)Series
Tj
= 175
°C
0
0
4
8
12
16
20
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
25
DC
180°
20
120°
90°
60°
30°
15
Rt
6K/
W
hS
A=
4K
/W
RMS Limit
-D
elt
aR
8K
/W
10K
/W
10
Conduction Period
15K/W
20K/W
30K/W
5
16D(R)Series
Tj
= 175
°C
0
0
5
10
15
20
25
30
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Page 3 of 5
SEMICONDUCTOR
16D(R)Series
RoHS
RoHS
N
ell
High Power Products
Fig. 5 Maximum Non-Repetitive Surge Current
325
300
275
250
225
200
175
150
125
1
10
100
Fig. 6 Forward Voltage Drop Characterisics
1000
Peak Half Sine Wave Forward Current (A)
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial TJ = 175°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
TJ = 25°C
TJ = 175°C
100
10
16D(R)Series
16D(R)Series
1
0
1
2
3
4
5
6
Number Of Equal Amplitude Half Cycle current Pulses(N)
Instantaneous Forward Voltage (V)
Fig.7 Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
350
325
300
275
250
225
200
175
150
125
0.01
0.1
1
Fig.8 Thermal Impedance ZthJC Characteristics
Transient Thermal Impedance ZthJC (K/W)
10
Steady State Value
RthJC = 1.6K/W
(DC Operation)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration
Initial TJ = 175°C
No Voltage Reapplied
Rated V
RRM
Reapplied
1
16D(R)Series
16D(R)Series
0.1
0.001
0.01
0.1
1
10
Pulse Train Duration (S)
Square Wave Pulse Duration (s)
ORDERING INFORMATION TABLE
Device code
16
1
D
R
3
12
4
M
5
2
1
2
3
4
5
-
-
-
-
-
Current rating: Code = I
F(AV)
D = Standard recovery device
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code
×
100 = V
RRM
(see Voltage Ratings table)
None = Stud base DO-203AA
(DO-4) #10-32 UNF-2A
M = Stud base DO-230AA (DO-4) M5
×
0.8 (not available
for avalanche diodes)
Page 4 of 5
SEMICONDUCTOR
16D(R)Series
RoHS
RoHS
N
ell
High Power Products
11.6/12.4
(0.45/0.48)
Ø8.5/Ø8.9
(Ø0.33/Ø0.35)
Ø1.5/Ø1.7
Ø0.05/Ø0.06
3.7/4.3
(0.14/0.16)
0.5/1.0
(0.02/0.04)
20.0/21.0
(0.78/0.82)
9.6/10.1
(0.37/0.39)
10/32” UNF-2A
For metric devices: M5
×
0.8
10.5/11.5
(0.41/0.45)
5.0/5.6
(0.19/0.22)
Page 5 of 5
10.6/11.2
(0.41/0.44)
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