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16CTQ080G-1TRRPBF

产品描述8 A, 80 V, SILICON, RECTIFIER DIODE, TO-262AA
产品类别分立半导体    二极管   
文件大小126KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

16CTQ080G-1TRRPBF概述

8 A, 80 V, SILICON, RECTIFIER DIODE, TO-262AA

16CTQ080G-1TRRPBF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码TO-262AA
包装说明R-PSIP-T3
针数3
Reach Compliance Codeunknow
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码TO-262AA
JESD-30 代码R-PSIP-T3
湿度敏感等级NOT SPECIFIED
最大非重复峰值正向电流850 A
元件数量2
相数1
端子数量3
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压80 V
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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16CTQ...GS/16CTQ...G-1
Vishay High Power Products
Schottky Rectifier, 2 x 8 A
16CTQ...GS
16CTQ...G-1
FEATURES
• 175 °C T
J
operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
Base
common
cathode
2
Base
common
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
D
2
PAK
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2x8A
60/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
8 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
16
60/100
650
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
16CTQ060GS
16CTQ060G-1
60
16CTQ080GS
16CTQ080G-1
80
16CTQ100GS
16CTQ100G-1
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 148 °C, rectangular waveform
16
650
A
210
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
8
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93243
Revision: 22-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

 
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