JANS 2N5152 and JANS 2N5154
RADIATION HARDENED
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DESCRIPTION
These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation
Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi
also offers numerous other products to meet higher and lower power voltage regulation
applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL,
JANSR, JANSF
FEATURES
•
•
JEDEC registered 2N5152 and 2N5154.
JANS RHA qualifications are available per MIL-PRF-19500/544.
TO-39
(TO-205AD)
Package
Also available in:
APPLICATIONS / BENEFITS
•
•
•
•
High frequency operation.
Lightweight.
High-speed power-switching applications.
High-reliability applications.
TO-5 Package
(long-leaded)
JANS_2N5152L &
JANS_2N5154L
U3 Package
(surface mount)
JANS_2N5152U3 &
JANS_2N5154U3
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
(1)
Reverse Pulse Energy
Collector Current (dc)
Collector to base voltage (static), emitter open
Collector to emitter voltage (static) base open
Emitter to base voltage (static) collector open
Steady-State Power Dissipation @ T
A
= +25 ºC
Steady-State Power Dissipation @ T
C
= +25 ºC
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJC
I
C
V
CBO
V
CEO
V
EBO
P
D
P
D
Value
-65 to +200
175
10
15
2
100
80
5.5
1
10
Unit
ºC
ºC/W
ºC/W
mJ
A
V
V
V
W
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load
energy test circuit.
T4-LDS-0100, Rev. 2 (120716)
©2012 Microsemi Corporation
Page 1 of 8
JANS 2N5152 and JANS 2N5154
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Gold plate over nickel.
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: NPN
WEIGHT: Approximately 1.064 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JANSM
Reliability Level
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
2N5152
JEDEC type number
(See
Electrical Characteristics
table)
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0100, Rev. 2 (120716)
©2012 Microsemi Corporation
Page 2 of 8
JANS 2N5152 and JANS 2N5154
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 ºC unless otherwise noted.
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
I
C
= 100 mA, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0 V, I
C
= 0
V
EB
= 5.5 V, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= 0
V
CE
= 100 V, V
BE
= 0
Collector-Emitter Cutoff Current
V
CE
= 40 V, I
B
= 0
ON CHARACTERISTICS
Parameters / Test Conditions
Forward-Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
I
C
= 2.5 A, V
CE
= 5 V
I
C
= 5A, V
CE
= 5V
Collector-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5.0 A, I
B
= 500 mA
Base-Emitter Voltage Non-Saturation
I
C
= 2.5 A, V
CE
= 5 V
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5.0 A, I
B
= 500 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
2N5152
2N5154
I
C
= 500 mA, V
CE
= 5 V, f = 10 MHz
Small-signal short Circuit Forward-Current
Transfer Ratio
2N5152
2N5154
I
C
= 100 mA, V
CE
= 5 V, f = 1 KHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Symbol
|h
fe
|
Min.
6
7
20
50
250
pF
Max.
Unit
2N5152
2N5154
2N5152
2N5154
2N5152
2N5154
Symbol
Min.
20
50
30
70
20
40
Max.
--
--
90
200
--
--
0.75
1.5
1.45
1.45
2.2
V
V
V
Unit
Symbol
V
(BR)CEO
I
EBO
Min.
80
Max.
Unit
V
1.0
1.0
1.0
1.0
50
µA
mA
µA
mA
µA
I
CES
I
CEO
h
FE
V
CE(sat)
V
BE
V
BE(sat)
h
fe
C
obo
T4-LDS-0100, Rev. 2 (120716)
©2012 Microsemi Corporation
Page 3 of 8
JANS 2N5152 and JANS 2N5154
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I
C
= 5 A, I
B1
= 500 mA
Turn-Off Time
R
L
= 6Ω
Storage Time I
B2
= -500 mA
Fall Time
V
BE(OFF)
= 3.7 V
Symbol
t
on
t
off
t
S
t
f
Min.
Max.
0.5
1.5
1.4
0.5
Unit
µs
µs
µs
µs
SAFE OPERATING AREA
(See SOA graph below and
MIL-STD-750, method 3053)
DC Tests
T
C
= +25 °C, t
P
= 1.0 s, 1 Cycle
Test 1
V
CE
= 5.0 V, I
C
= 2.0 A
Test 2
V
CE
= 32 V, I
C
= 310 mA
Test 3
V
CE
= 80 V, I
C
= 12.5 mA
dc Operation
T
C
< 25 ºC
I
C
– COLLECTOR CURRENT - A
V
CE
– COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0100, Rev. 2 (120716)
©2012 Microsemi Corporation
Page 4 of 8
JANS 2N5152 and JANS 2N5154
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Collector to Emitter Cutoff Current
V
CE
= 40 V
Emitter to Base Cutoff Current
V
EB
= 4 V
Breakdown Voltage, Collector to Emitter
I
C
= 100 mA
Collector to Emitter Cutoff Current
V
CE
= 60 V
Emitter to Base Cutoff Current
V
EB
= 5.5 V
(1)
Forward-Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
I
C
= 2.5 A, V
CE
= 5 V
I
C
= 5 A pulsed, V
CE
= 5 V
Symbol
I
CEO
I
EBO
V
(BR)CEO
I
CES
I
EBO
2N5152
2N5154
2N5152
2N5154
2N5152
2N5154
Base to Emitter voltage (non-saturated)
V
CE
= 5 V, I
C
= 2.5 A, pulsed
Collector-Emitter Saturation Voltage
I
C
= 2.5 mA, I
B
= 250 mA, pulsed
I
C
= 500 mA, I
B
= 500 mA, pulsed
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
I
C
= 5 A, I
B
= 500 mA, pulsed
V
BE
V
CE(sat)
[h
FE
]
[10]
[25]
[15]
[35]
[10]
[20]
1.45
0.86
1.73
1.67
2.53
V
V
90
200
80
2.0
2.0
Min.
Max.
100
2.0
Unit
µA
µA
V
µA
mA
V
BE(sat)
V
(1) See method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the pre-
and post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The [h
FE
] value
can never exceed the pre-radiation minimum h
FE
that it is based upon.
T4-LDS-0100, Rev. 2 (120716)
©2012 Microsemi Corporation
Page 5 of 8
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