COMMUNICATIONS COMPONENTS
Forward and Return Path Analog CATV Detector Modules
EPM 7xx Series
Key Features
• Electro-optical
- Low intermodulation distortion
- High responsivity
- Low back reflection
• Packaging
- Single mode 900 µm fiber with or without a connector
- Single mode 250 µm fiber without a connector
Applications
• AM fiber optic CATV receivers to
550 MHz (EPM 705) and 860 MHz
(EPM 745)
• Multi-channel fiber optic transmission
The EPM 7xx series are high quality analog photodetectors designed for forward
path (EPM 745) and return path (EPM 705) AM CATV applications. These
coaxial modules are optically aligned to optimize performance and balance the
parameters of responsivity, distortion and back reflection.
The photodetector die is fabricated with a proprietary InGaAs process in our
wafer fab and assembled into a hermetically-sealed package with an antireflective-
coated lens. A stainless steel bushing is used to actively couple the fiber to the package.
The fiber is reinforced with a rubber boot which relieves fiber bending stresses.
The EPM 7xx series can be produced without a connector or with a variety of
industry standard connectors. They are also available with a mounting bracket
which allows both vertical panel mounting and horizontal flush-to-board mounting.
NORTH AMERICA
:
800 498-JDSU (5378)
WORLDWIDE
:
+800 5378-JDSU
WEBSITE
:
www.jdsu.com
FORWARD AND RETURN PATH
ANALOG CATV DETECTOR MODULES
2
Dimensions Diagram
(Specifications in mm unless otherwise noted.)
EPM 705 with Dual Mount Bracket
EPM 705 without Dual Mount Bracket
EPM 745 with Dual Mount Bracket
EPM 745 without Dual Mount Bracket
FORWARD AND RETURN PATH
ANALOG CATV DETECTOR MODULES
3
Figure 1: EPM 705
Dark Current vs. Reverse Bias
1E-05
85 ˚C
1E-06
65 ˚C
45 ˚C
1E-07
Current (A)
25 ˚C
Current (A)
1E-09
1E-08
Figure 2: EPM 745
Dark Current vs. Reverse Bias
1E-08
1E-10
80 ˚C
60 ˚C
1E-11
40 ˚C
20 ˚C
0 ˚C
1E-09
1E-10
1E-11
0
5
10
15
20
25
30
Reverse Voltage (V)
1E-12
0
5
10
15
20
25
Reverse Voltage (V)
Figure 3: EPM 705
Capacitance vs. Reverse Bias
23˚C
1.4
1.2
Figure 4: EPM 745
Capacitance vs. Reverse Bias
23˚C
0.5
0.4
1.0
Capacitance (pF)
Capacitance (pF)
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
0.3
0.2
0.1
0.0
0
2
4
6
8
10
12
Reverse Voltage (V)
Reverse Voltage (V)
FORWARD AND RETURN PATH
ANALOG CATV DETECTOR MODULES
4
Figure 5: EPM 745
IM2 vs. Input Optical Power
Bias = -12V; Mod. Index = 0.7
Typical Values
-65
-65
Figure 6: EPM 745
IM2 vs. Bias Voltage
Input Power = 0 dBm; Mod. Index = 0.7
Typical Values
Intermodulation Distortion (dBc)
Intermodulation Distortion (dBc)
-70
-70
-75
-75
-80
-80
-85
-90
-95
-85
-90
-4
-2
0
2
4
6
8
0
2
4
6
8
10
12
14
Input Power (dBm)
Reverse Voltage (dBm)
Figure 7: EPM 705/745
Typical Spectral Response
23 ˚C
1.0
EPM 745 Equivalent Circuit
0.8
Responsivity (A/W)
0.6
0.4
0.2
0.0
800
1000
1200
1400
1600
1800
Wavelength (nm)
FORWARD AND RETURN PATH
ANALOG CATV DETECTOR MODULES
5
Specifications
(Temperature = 25°C, V
R
= 5 V unless noted. All specifications without connector.)
Parameter
Responsivity
Distortion product IM
2
Back reflection
Dark current
Capacitance
3
Bandwidth
4
Single mode fiber 900 µm
8.7/125 µm core/cladding
Conditions
λ
= 1310 nm
λ
= 1550 nm
Minimum
Minimum
Maximum
Maximum
Maximum
Maximum
Typical
Minimum
Maximum
EPM 705
0.80 A/W
0.85 A/W
-70 dBc
1
-40 dB
5.0 nA
0.75 pF
2.0 GHz
1.0 m
1.5 m
EPM 745
0.85 A/W
0.90 A/W
-75 dBc
2
-45 dB
1.0 nA
0.35 pF
3.0 GHz
1.0 m
1.5 m
1. IM
2
measured at V
R
= 12 V, P
avg
= 0 dBm, MI = 0.7, R
load
= 50
Ω,
f
1
+ f
2
= 324.25 MHz, f
1
- f
2
= 54.25 MHz.
2. IM
2
measured at V
R
= 12 V, P
avg
= 0 dBm, MI = 0.7, R
load
= 50
Ω,
f
1
+ f
2
= 850.25 MHz, f
1
- f
2
= 50.25 MHz.
3. Measured with case grounded.
4. -3 dB point into a 50
Ω
load.
Maximum Ratings
Parameter
Forward current
1
Reverse current
2
Reverse voltage
Power dissipation
Operating case temperature
Soldering temperature
Storage temperature
Minimum
Minimum
Minimum
Minimum
Minimum
Maximum
Minimum
Minimum
Maximum
Specification
10 mA
10 mA
25 V
100 mW
-40°C
85°C
260°C
-40°C
85°C
1. Under forward bias, current at which device may be damaged.
2. Under reverse bias, current at which device may be damaged.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
