CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
FEATURES
*Small surface mounting type. (SOD-123S)
* Low forward voltage, high current capability
* Low leakage current
* Metallurgically bonded construction
* Glass passivated junction
* High temperature soldering guaranteed :
260
o
C/10 seconds at terminals
HSM11SPT
THRU
HSM18SPT
SOD-123S
0.5~1.0
1.4~1.95
2.55~3.0
0.8~1.35
0.25(max)
0.25(min)
CIRCUIT
(2)
3.5~3.95
(1)
Dimensions in millimeters
SOD-123S
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current T
L
= 110
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
C
J
T
J
, T
STG
15
-65 to +150
12
pF
o
SYMBOL
HSM11SPT HSM12SPT HSM13SPT HSM14SPT HSM15SPT HSM16SPT HSM17SPT HSM18SPT
UNITS
V
RRM
V
RMS
V
DC
I
O
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
30
Amps
C
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0 A DC
Maximum DC Reverse Current
o
at Rated DC Blocking Voltage at T
A
= 25 C
Maximum Full Load Reverse Current Average,
Full Cycle at T
A
= 55
o
C
Maximum Reverse Recovery Time (Note 2)
SYMBOL
HSM11RST HSM12SPT HSM13SPT HSM14SPT HSM15SPT HSM16SPT HSM17SPT HSM18SPT
UNITS
V
F
I
R
I
R
trr
50
1.0
1.3
5.0
100
70
1.5
1.7
Volts
uAmps
uAmps
nSec
2004-07
NOTES : 1. Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 volts
2. Test Conditions : I
F
= 0.5 A, I
R
= -1.0 A, I
RR
= -0.25 A
RATING CHARACTERISTIC CURVES ( HSM11SPT THRU HSM18SPT )
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
(NOTE 2)
-0.25A
AVERAGE FORWARD CURRENT, ( A )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
1.5
(+)
25 Vdc
(approx)
(-)
D.U.T
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
0.5
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
1cm
SET TIME BASE FOR
10/20 nS/cm
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE (
O
C )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
5SP
T~1
1SP
HS
HS
M1
4SP
HS
M1
T
J
=100
o
C
1.0
T
J
=25
o
C
0.1
.1
T
J
=25
o
C
.01
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
.001
0
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
1.8
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, ( A )
35
JUNCTION CAPACITANCE, ( pF )
30
25
20
15
10
5
0
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
T
J
=25
o
C
HSM
11SP
T~15
S
PT
HSM1
6SPT~
18SPT
HS
M
17
SP
10
1.0
T~1
T
J
=125 C
M1
T~
18
o
6S
SP
Pulse Width = 300uS
1% Duty Cycle
3SP
T
T
PT
T
MEMS传感器
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