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SK24AF3

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, FOLDED SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小200KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SK24AF3概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, FOLDED SMA, 2 PIN

SK24AF3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明ROHS COMPLIANT, PLASTIC, FOLDED SMA, 2 PIN
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.7 V
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流50 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
最大重复峰值反向电压60 V
最大反向电流500 µA
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

文档预览

下载PDF文档
SK22A thru SK215A
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.07 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@2A
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.50
0.5
I
R
dV/dt
E
RSM
R
θJA
T
J
T
STG
- 55 to +125
- 55 to +150
10
-
10000
20
88
- 55 to +150
O
SK
22A
20
14
20
SK
23A
30
21
30
SK
24A
40
28
40
SK
25A
50
35
50
2
50
0.70
SK
26A
60
42
60
SK
29A
90
63
90
SK
100
70
100
SK
150
105
150
210A 215A
Unit
V
V
V
A
A
0.85
0.1
0.95
V
5
-
2.0
mA
V/μs
mJ
C/W
O
O
Voltage Rate of Change (Rated V
R
)
Non-repetitive peak reverse avalanche
energy L=40mH Ta=25℃ max prior to surge,
Inductive load switched off
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C
C
Document Number: DS_D1308027
Version: L13

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