Page Mode DRAM, 64KX4, 100ns, NMOS, PQCC18, 0.290 INCH, PLASTIC, LCC-18
参数名称 | 属性值 |
厂商名称 | OKI |
零件包装代码 | LCC |
包装说明 | QCCJ, |
针数 | 18 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | PAGE |
最长访问时间 | 100 ns |
其他特性 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
JESD-30 代码 | R-PQCC-J18 |
长度 | 12.45 mm |
内存密度 | 262144 bit |
内存集成电路类型 | PAGE MODE DRAM |
内存宽度 | 4 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 18 |
字数 | 65536 words |
字数代码 | 64000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 64KX4 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | QCCJ |
封装形状 | RECTANGULAR |
封装形式 | CHIP CARRIER |
认证状态 | Not Qualified |
刷新周期 | 256 |
座面最大高度 | 3.55 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | NMOS |
温度等级 | COMMERCIAL |
端子形式 | J BEND |
端子节距 | 1.27 mm |
端子位置 | QUAD |
宽度 | 7.24 mm |
MSM41464-10JS | MSM41464-10RS | MSM41464-12JS | MSM41464-15RS | MSM41464-15JS | MSM41464-12RS | |
---|---|---|---|---|---|---|
描述 | Page Mode DRAM, 64KX4, 100ns, NMOS, PQCC18, 0.290 INCH, PLASTIC, LCC-18 | Page Mode DRAM, 64KX4, 100ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | Page Mode DRAM, 64KX4, 120ns, NMOS, PQCC18, 0.290 INCH, PLASTIC, LCC-18 | Page Mode DRAM, 64KX4, 150ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 | Page Mode DRAM, 64KX4, 150ns, NMOS, PQCC18, 0.290 INCH, PLASTIC, LCC-18 | Page Mode DRAM, 64KX4, 120ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 |
厂商名称 | OKI | OKI | OKI | OKI | OKI | OKI |
零件包装代码 | LCC | DIP | LCC | DIP | LCC | DIP |
包装说明 | QCCJ, | DIP, | QCCJ, | DIP, | QCCJ, | DIP, |
针数 | 18 | 18 | 18 | 18 | 18 | 18 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
最长访问时间 | 100 ns | 100 ns | 120 ns | 150 ns | 150 ns | 120 ns |
其他特性 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
JESD-30 代码 | R-PQCC-J18 | R-PDIP-T18 | R-PQCC-J18 | R-PDIP-T18 | R-PQCC-J18 | R-PDIP-T18 |
长度 | 12.45 mm | 22.6 mm | 12.45 mm | 22.6 mm | 12.45 mm | 22.6 mm |
内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
内存集成电路类型 | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 18 | 18 | 18 | 18 | 18 | 18 |
字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | QCCJ | DIP | QCCJ | DIP | QCCJ | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 256 | 256 | 256 | 256 | 256 | 256 |
座面最大高度 | 3.55 mm | 4.5 mm | 3.55 mm | 4.5 mm | 3.55 mm | 4.5 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | NO | YES | NO | YES | NO |
技术 | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | J BEND | THROUGH-HOLE | J BEND | THROUGH-HOLE | J BEND | THROUGH-HOLE |
端子节距 | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm |
端子位置 | QUAD | DUAL | QUAD | DUAL | QUAD | DUAL |
宽度 | 7.24 mm | 7.62 mm | 7.24 mm | 7.62 mm | 7.24 mm | 7.62 mm |
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