AP1A003GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
SO-8 Compatible with Heatsink
▼
Low On-resistance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
D
30V
1.2mΩ
235A
S
Description
AP1A003 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK
®
5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
D
D
S
S
S
G
PMPAK 5x6
®
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V
GS
@ 10V
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
4
.
Rating
30
+20
235
52
41
300
104
5
Units
V
V
A
A
A
A
W
W
mJ
℃
℃
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
5
45
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
1.2
25
Unit
℃/W
℃/W
1
201504224
Data and specifications subject to change without notice
AP1A003GMT-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=25A
V
GS
=5V, I
D
=25A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=25A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=25A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
75
-
-
70
30
30
25
15
100
60
1070
710
1.1
Max. Units
-
1.2
2.2
3
-
10
+100
112
-
-
-
-
-
-
-
-
2.2
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
9800
15680
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=20A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
40
35
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
4.Package limitation current is 60A .
5.Starting T
j
=25
o
C , V
DD
=30V , L=0.1mH , R
G
=25Ω.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1A003GMT-HF
250
200
T
C
=25 C
200
o
I
D
, Drain Current (A)
150
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
C
= 150
o
C
160
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
120
100
80
50
40
0
0
4
8
12
16
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.8
I
D
= 25 A
T
C
=25
o
C
1.4
1.6
I
D
=25A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.4
1.2
.
1.2
1.0
1
0.8
0.8
0.6
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
40
I
D
=250uA
1.6
30
Normalized V
GS(th)
I
S
(A)
T
j
=150 C
20
o
T
j
=25 C
o
1.2
0.8
10
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1A003GMT-HF
8
16000
f=1.0MHz
I
D
= 25 A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
6
12000
C (pF)
C
iss
8000
4
2
4000
0
0
40
80
120
160
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
Operation in this area
limited by R
DS(ON)
100
100us
0.1
0.1
0.05
I
D
(A)
1ms
10
.
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
c
10ms
T
C
=25
o
C
Single Pulse
1
0.01
0.1
1
10
100
100ms
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
300
V
G
I
D
, Drain Current (A)
200
Q
G
4.5V
Q
GS
Q
GD
100
Limited by package
Charge
0
25
50
75
100
125
150
Q
T
C
, Case Temperature (
o
C)
Fig 11. Drain Current v.s. Case
Temperature
Fig 12. Gate Charge Waveform
4
AP1A003GMT-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
1A003GMT
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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