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Datasheet> 器件分类 > 存储> 存储> IS45S32160F-6BLA1

IS45S32160F-6BLA1: 产品描述Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90; 产品类别存储存储; 文件大小1MB，共61页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS45S32160F-6BLA1概述

Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

IS45S32160F-6BLA1规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
包装说明	TFBGA, BGA90,9X15,32
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	R-PBGA-B90
长度	13 mm
内存密度	536870912 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	32
功能数量	1
端口数量	1
端子数量	90
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	16MX32
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA90,9X15,32
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
电源	3.3 V
认证状态	Not Qualified
刷新周期	8192
筛选级别	AEC-Q100
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	1,2,4,8,FP
最大待机电流	0.004 A
最大压摆率	0.245 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
宽度	8 mm

IS45S32160F-6BLA1相似产品对比

	IS45S32160F-6BLA1	IS45S32160F-6TLA1	IS45S32160F-7BLA1	IS45S32160F-7TLA1	IS42R32160F-6BL	IS42R32160F-6BLI
描述	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
包装说明	TFBGA, BGA90,9X15,32	TSOP2, TSSOP86,.46,20	TFBGA, BGA90,9X15,32	TSOP2, TSSOP86,.46,20	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32
Reach Compliance Code	compliant	compliant	compli	compli	compli	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns
其他特性	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
最大时钟频率 (fCLK)	166 MHz	166 MHz	143 MHz	143 MHz	166 MHz	166 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	R-PBGA-B90	R-PDSO-G86	R-PBGA-B90	R-PDSO-G86	R-PBGA-B90	R-PBGA-B90
长度	13 mm	22.22 mm	13 mm	22.22 mm	13 mm	13 mm
内存密度	536870912 bit	536870912 bit	536870912 bi	536870912 bi	536870912 bi	536870912 bi
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	32	32	32	32	32	32
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	90	86	90	86	90	90
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	70 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-	-40 °C
组织	16MX32	16MX32	16MX32	16MX32	16MX32	16MX32
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TSOP2	TFBGA	TSOP2	TFBGA	TFBGA
封装等效代码	BGA90,9X15,32	TSSOP86,.46,20	BGA90,9X15,32	TSSOP86,.46,20	BGA90,9X15,32	BGA90,9X15,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
电源	3.3 V	3.3 V	3.3 V	3.3 V	2.5 V	2.5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	YES	YES	YES
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.004 A	0.004 A	0.004 A	0.004 A	0.004 A	0.004 A
最大压摆率	0.245 mA	0.245 mA	0.23 mA	0.23 mA	0.245 mA	0.245 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子形式	BALL	GULL WING	BALL	GULL WING	BALL	BALL
端子节距	0.8 mm	0.5 mm	0.8 mm	0.5 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	DUAL	BOTTOM	DUAL	BOTTOM	BOTTOM
宽度	8 mm	10.16 mm	8 mm	10.16 mm	8 mm	8 mm
筛选级别	AEC-Q100	AEC-Q100	AEC-Q100	AEC-Q100	-	-

IS45S32160F-6BLA1

IS45S32160F-6BLA1概述

IS45S32160F-6BLA1规格参数

IS45S32160F-6BLA1相似产品对比

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