DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4240T
40 V; 2 A NPN low V
CEsat
(BISS) transistor
Product data sheet
Supersedes data of 2001 Jul 13
2004 Jan 09
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved device reliability due to reduced heat
generation
•
Replacement for SOT89/SOT223 standard packaged
transistors.
APPLICATIONS
•
Supply line switching circuits
•
Battery management applications
•
DC/DC converter applications
•
Strobe flash units
•
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
PNP complement: PBSS5240T.
1
2
handbook, halfpage
PBSS4240T
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX.
40
3
<200
UNIT
V
A
mΩ
3
3
1
2
MARKING
TYPE NUMBER
PBSS4240T
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4240T
MARKING CODE
(1)
ZE*
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 09
2
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
T
amb
≤
25
°C;
note 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
PBSS4240T
MAX.
40
40
5
2
3
300
300
480
+150
150
+150
V
V
V
A
A
UNIT
mA
mW
mW
°C
°C
°C
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
417
260
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
2004 Jan 09
3
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
CONDITIONS
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
emitter-base cut-off current
DC current gain
I
C
= 0; V
EB
= 4 V
I
C
= 100 mA; V
CE
= 2 V
I
C
= 500 mA; V
CE
= 2 V
I
C
= 1 A; V
CE
= 2 V
I
C
= 2 A; V
CE
= 2 V
V
CEsat
collector-emitter saturation
voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 750 mA; I
B
= 15 mA
I
C
= 1 A; I
B
= 50 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
R
CEsat
V
BEsat
V
BEon
C
c
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn on voltage
collector capacitance
transition frequency
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 100 mA; V
CE
= 2 V
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 100 mA; V
CE
= 10 V; f = 100 MHz
MIN.
−
−
−
350
300
300
150
−
−
−
−
−
−
−
−
−
100
PBSS4240T
TYP.
−
−
−
470
450
420
250
45
70
120
130
240
140
−
−
15
230
MAX.
100
50
100
−
−
−
−
70
100
180
180
320
<200
1.1
0.75
20
−
UNIT
nA
μA
nA
collector-base cut-off current I
E
= 0; V
CB
= 30 V
mV
mV
mV
mV
mV
mΩ
V
V
pF
MHz
2004 Jan 09
4
NXP Semiconductors
Product data sheet
40 V; 2 A NPN low V
CEsat
(BISS) transistor
PACKAGE OUTLINE
PBSS4240T
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 09
5
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