SRAM Module, 256KX32, 45ns, CMOS,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | EDI [Electronic devices inc.] |
| Reach Compliance Code | unknown |
| 最长访问时间 | 45 ns |
| 其他特性 | CONFIGURABLE AS 256K X 32 |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XZMA-T64 |
| JESD-609代码 | e0 |
| 内存密度 | 8388608 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 32 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 64 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX32 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | ZIP |
| 封装等效代码 | ZIP64/68,.1,.1 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 13.462 mm |
| 最大待机电流 | 0.03 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.96 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 1.27 mm |
| 端子位置 | ZIG-ZAG |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| EDI8F32256C45MZC | EDI8F32257B17MZC | EDI8F32256C45MMC | EDI8F32257C45MZC | EDI8F32257B20MZC | EDI8F32256B20MMC | EDI8F32256B20MZC | EDI8F32256C45M6C | EDI8F32256B17MMC | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 256KX32, 45ns, CMOS, | SRAM Module, 256KX32, 17ns, CMOS, | SRAM Module, 256KX32, 45ns, CMOS, | SRAM Module, 256KX32, 45ns, CMOS, | SRAM Module, 256KX32, 20ns, CMOS, | SRAM Module, 256KX32, 20ns, CMOS, | SRAM Module, 256KX32, 20ns, CMOS, | SRAM Module, 256KX32, 45ns, CMOS, | SRAM Module, 256KX32, 17ns, CMOS, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 45 ns | 17 ns | 45 ns | 45 ns | 20 ns | 20 ns | 20 ns | 45 ns | 17 ns |
| JESD-30 代码 | R-XZMA-T64 | R-XZMA-T64 | R-XSMA-N64 | R-XZMA-T64 | R-XZMA-T64 | R-XSMA-N64 | R-XZMA-T64 | R-XDMA-T60 | R-XSMA-N64 |
| 内存密度 | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit | 8388608 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 60 | 64 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 | 256KX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES | NO | YES |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
| 端子位置 | ZIG-ZAG | ZIG-ZAG | SINGLE | ZIG-ZAG | ZIG-ZAG | SINGLE | ZIG-ZAG | DUAL | SINGLE |
| 厂商名称 | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | - | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] |
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