Rectifier Diode, 1 Element, 0.4A, 225V V(RRM), Silicon, DO-7,
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Central Semiconductor |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| JEDEC-95代码 | DO-7 |
| JESD-30 代码 | O-XALF-W2 |
| JESD-609代码 | e0 |
| 最大非重复峰值正向电流 | 15 A |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 175 °C |
| 最低工作温度 | -65 °C |
| 最大输出电流 | 0.4 A |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | ROUND |
| 封装形式 | LONG FORM |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 最大功率耗散 | 0.6 W |
| 认证状态 | Not Qualified |
| 最大重复峰值反向电压 | 225 V |
| 最大反向恢复时间 | 0.2 µs |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |

| 1N645 | 1N649LEADFREE | 1N647LEADFREE | 1N649M | 1N645N | H6496PTC808F120150 | 1N647 | 1N648 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Rectifier Diode, 1 Element, 0.4A, 225V V(RRM), Silicon, DO-7, | Rectifier Diode, 1 Element, 0.4A, 600V V(RRM), Silicon, DO-7 | Rectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon, DO-7 | Rectifier Diode, 1 Element, 0.4A, 600V V(RRM), Silicon, DO-7, | Rectifier Diode, 1 Element, 0.4A, 225V V(RRM), Silicon, DO-7 | PTC Thermistor, 0.8ohm, Through Hole Mount, RADIAL LEADED | Rectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon, DO-7 | Rectifier Diode, 1 Element, 0.4A, 500V V(RRM), Silicon, DO-7 |
| Reach Compliance Code | not_compliant | compli | compli | compli | unknown | compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | DISK PACKAGE | ROUND | ROUND |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子位置 | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | RADIAL | AXIAL | AXIAL |
| 是否无铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | 含铅 | - | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | - | - | - | 不符合 | 不符合 |
| 厂商名称 | Central Semiconductor | - | Central Semiconductor | - | Central Semiconductor | - | Central Semiconductor | Central Semiconductor |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 二极管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON |
| 二极管类型 | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE |
| JEDEC-95代码 | DO-7 | DO-7 | DO-7 | DO-7 | DO-7 | - | DO-7 | DO-7 |
| JESD-30 代码 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | - | O-XALF-W2 | O-XALF-W2 |
| JESD-609代码 | e0 | e3 | e3 | e0 | e0 | - | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | - | 175 °C | 175 °C |
| 最低工作温度 | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | - | -65 °C | -65 °C |
| 最大输出电流 | 0.4 A | 0.4 A | 0.4 A | 0.4 A | 0.4 A | - | 0.4 A | 0.4 A |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED |
| 封装形式 | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | - | LONG FORM | LONG FORM |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 最大功率耗散 | 0.6 W | 0.6 W | 0.6 W | 0.6 W | 0.6 W | - | 0.6 W | 0.6 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 最大重复峰值反向电压 | 225 V | 600 V | 400 V | 600 V | 225 V | - | 400 V | 500 V |
| 最大反向恢复时间 | 0.2 µs | 0.2 µs | 0.2 µs | 0.2 µs | 0.2 µs | - | 0.2 µs | - |
| 端子面层 | Tin/Lead (Sn/Pb) | MATTE TIN (315) | MATTE TIN (315) | TIN LEAD | TIN LEAD | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | - | WIRE | WIRE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 10 | 10 | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 包装说明 | - | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | RADIAL LEADED | - | - |
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