WTK4435
Surface Mount P-Channel
Enhancement Mode MOSFET
P b
Lead(Pb)-Free
DRAIN CURRENT
-8 AMPERES
DRAIN SOURCE VOLTAGE
D
G
4
5
D
1
2
3
S
S
S
8
7
6
D
D
Features:
-30 VOLTAGE
* Super high dense
* Cell design for low R
DS(ON)
* R
DS(ON)
<20m @V
GS
= -10V
* R
DS(ON)
<35m @V
GS
= -4.5V
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching
1
SOP-8
Description:
The WTK4435 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-e ectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
Maximum Ratings
(T
A
=25˚C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(1)
Power Dissipation
(T
A
=25°C)
(T
A
=25°C)
(T
A
=70°C)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R θ
JA
T
J
Tstg
Value
-30
±20
-8
-6
-50
2.5
50
+150
-55 to +150
Unite
V
V
A
A
W
°C/W
°C
°C
Maximax Junction-to-Ambient
Operating Junction Temperature Range
Storage Temperature Range
Device Marking
WTK4435=4435SC
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WTK4435
Electrical Characteristics
Characteristic
(T
A
=25°C U nless otherwise noted)
Symbol
V
(BR)DSS
V
GS (th)
I
GSS
I
DSS
Min
Typ
-
-
-
Max
-
-3.0
±100
-1
-5
20
35
Unit
V
V
nA
A
Static
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250 uA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=-250 uA
Gate-Source Leakage Current
+
V
DS
=0V, V
GS
=-20V
Zero Gate Voltage Drain Current
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
Drain-Source On-Resistance
V
GS
=-10V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
Forward Transconductance
V
DS
=-10V , I
D
=-8A
-30
-1.0
-
-
-
R
DS (
on
)
g
fs
-
-
-
-
-
20
m
S
-
Dynamic
Input Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
=0V, f=1MHZ
C
iss
C
oss
C
rss
-
-
-
2800
1400
350
-
-
-
PF
Switching
Turn-On Delay Time
(2)
V
DS
= -15V, I
D
= -1A, V
GS
= -10V, R
G
= 6
, R
D
= 15
Rise Time
V
DS
= -15V, I
D
= -1A, V
GS
= -10V, R
G
= 6
, R
D
= 15
Turn-O Time
V
DS
= -15V, I
D
= -1A, V
GS
= -10V, R
G
= 6
, R
D
= 15
Fall Time
V
DS
= -15V, I
D
= -1A, V
GS
= -10V, R
G
= 6
, R
D
= 15
Total Gate Charge
(2)
V
DS
=-15V, I
D
=-4.6A, V
GS
=-10V
Gate-Source Charge
V
DS
=-15V, I
D
=-4.6A, V
GS
=-10V
Gate-Drain Charge
V
DS
=-15V, I
D
=-4.6A, V
GS
=-10V
Drain-Source Diode Forward Voltage
(2)
V
GS
=0V, I
S
=-2.1A
Continuous Source Current(Body Diode)
V
D=
V
G
=0V, V
S
=-1.2V
Pulsed Source Current(Body Diode)
(1)
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
t
tf
Qg
Qgs
Qgd
t
d
(
on
)
tr
)
-
-
-
-
-
-
-
-
-
-
30
20
120
80
47
9.5
8
-0.75
-
-
-
nS
nS
nS
nS
nc
nc
nc
V
A
A
-
-
-
-
-
-
-1.2
-2.1
-50
V
SD
I
S
I
SM
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