MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
TM25DZ/CZ-24,-2H
•
I
T (AV)
•
V
RRM
•
•
•
•
Average on-state current ............
25A
Repetitive peak reverse voltage
........
1200/1600V
V
DRM
Repetitive peak off-state voltage
.........
1200/1600V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
K2 G2
(DZ)
K
2
G
2
A
1
K
2
CR
1
K
1
CR
2
A
2
K
1
G
1
13
K1 G1
16.5
23
23
3–M5
26
(CZ)
K
2
G
2
Tab # 110,
t=0.5
A
1
CR
1
K
1
K
2
CR
2
A
2
K
1
G
1
9
6.5
LABEL
21
30
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Conditions
Ratings
39
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=87°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=0.5A, T
j
=125°C
25
500
1.0
×
10
3
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
5.0
0.5
10
5.0
2.0
–40~+125
–40~+125
Charged part to case
Main terminal screw M5
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=75A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
10
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
10
10
1.8
—
3.0
—
50
0.8
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.5
500
T
j
=125°C
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
400
300
200
100
1.0
1.5
2.0
2.5
0
1
2 3
5 7 10
20 30
50 70100
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 7 10
1
1.0
TRANSIENT THERMAL IMPEDANCE
(°C/W)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
GATE CHARACTERISTICS
4
3
2
V
FGM
=10V
10
1
P
GM
=5.0W
7
5 V
GT
=3.0V
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
50mA
7
5 T
j
=
25°C
3
2
V
GD
=0.25V
–1
10
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE VOLTAGE (V)
GATE CURRENT (mA)
I
FGM
=2.0A
TIME (s)
50
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
90°
60°
180°
120°
130
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
AVERAGE ON-STATE POWER
DISSIPATION (W)
CASE TEMPERATURE (°C)
40
120
30
110
20
PER SINGLE
ELEMENT
100
10
90
θ=30°
0
5
10
60° 90° 120° 180°
15
20
25
0
0
5
10
15
20
25
80
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
50
AVERAGE ON-STATE POWER
DISSIPATION (W)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
270°
DC
180°
130
120
CASE TEMPERATURE (°C)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
40
60°
30
30°
120°
90°
110
100
90
80
70
60
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
20
θ
360°
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
24
32
40
θ=30°
60° 90° 180° 270° DC
120°
10
0
0
8
16
50
0
5
10
15
20
25
30
35
40
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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