MITSUBISHI THYRISTOR MODULES
TM60SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
TM60SA-6
Average on-state current ............
60A
Repetitive peak reverse voltage
................
300V
•
V
DRM
Repetitive peak off-state voltage
................
300V
•
TRIPLE ARMS
•
Non-Insulated Type
•
I
T (AV)
•
V
RRM
APPLICATION
Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
3–φ6×7
18
20
20
1
K
2
K
3
K
2
G
2
2–φ6.5
13
26
K
1
K
3
G
3
K
3
80
93.5
K
3
G
3
CR
3
K
1
G
1
K
2
K
1
K
2
G
2
CR
2
CR
1
K
1
G
1
Tab#110
t=0.5
4
2.2
56
A
9
6.5
LABEL
A
19
41
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM60SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
6
300
360
240
300
360
240
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Conditions
Ratings
94
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
N·m
kg·cm
N·m
kg·cm
g
Three-phase, half-wave, T
C
=125°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=150°C
60
1200
6.0
×
10
3
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
50
5.0
0.5
10
5.0
2.0
–40~+150
–40~+125
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
1.47~1.96
15~20
1.96~2.94
20~30
160
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
T
j
=150°C, V
RRM
applied
T
j
=150°C, V
DRM
applied
T
j
=150°C, I
TM
=180A, instantaneous meas.
T
j
=150°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=150°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Test conditions
Min.
—
—
—
200
—
0.25
15
—
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
15
15
1.2
—
3.0
—
100
0.3
0.3
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM60SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.6
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
3
7 T
j
=150°C
5
3
2
2000
1600
1200
800
400
0.8
1.0
1.2
1.4
1.6
1.8
(V)
2.0
0
1
2 3
5 7 10
20 30
50 70100
ON-STATE VOLTAGE
CONDUCTION TIME
(CYCLE AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 710
1
0.40
TRANSIENT THERMAL IMPEDANCE
(°C/W)
GATE CHARACTERISTICS
4
3
2
(V)
V
FGM
=10V
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
10
1
P
GM
=5.0W
7
5 V
GT
=3.0V
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
100mA
7
5
T
j
=25°C
3
2
V
GD
=0.25V
–1
10
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
I
FGM
=2.0A
GATE VOLTAGE
80
70
AVERAGE ON-STATE POWER
DISSIPATION (W)
MAXIMUM AVERAGE ON-STAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
180°
120°
90°
θ=30°
60°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
40 50 60 70 80
(°C)
CASE TEMPERATURE
60
50
40
30
20
10
0
0
10
20
30
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
150
RESISTIVE,
INDUCTIVE LOAD
140
θ
PER SINGLE
360°
130
ELEMENT
120
110
100
90
80
70
0
10
20
30
40
50
60
70
80
120°
θ=30°
60° 90°
180°
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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