16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Toshiba(东芝) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP24,.3 |
| 针数 | 24 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 最长访问时间 | 35 ns |
| 其他特性 | LOW POWER STANDBY MODE |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDIP-T24 |
| JESD-609代码 | e0 |
| 内存密度 | 16384 bi |
| 内存集成电路类型 | CACHE SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 24 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 2KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP24,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 240 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5 mm |
| 最大压摆率 | 0.135 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| TMM2018AP-35 | TMM2018AP | TMM2018AP-45 | TMM2018AP-25 | |
|---|---|---|---|---|
| 描述 | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply | 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
| 是否无铅 | 含铅 | - | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 |
| 厂商名称 | Toshiba(东芝) | - | Toshiba(东芝) | Toshiba(东芝) |
| 零件包装代码 | DIP | - | DIP | DIP |
| 包装说明 | DIP, DIP24,.3 | - | DIP, DIP24,.3 | DIP, DIP24,.3 |
| 针数 | 24 | - | 24 | 24 |
| Reach Compliance Code | unknow | - | unknow | unknow |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 |
| 最长访问时间 | 35 ns | - | 45 ns | 25 ns |
| 其他特性 | LOW POWER STANDBY MODE | - | LOW POWER STANDBY MODE | LOW POWER STANDBY MODE |
| I/O 类型 | COMMON | - | COMMON | COMMON |
| JESD-30 代码 | R-PDIP-T24 | - | R-PDIP-T24 | R-PDIP-T24 |
| JESD-609代码 | e0 | - | e0 | e0 |
| 内存密度 | 16384 bi | - | 16384 bi | 16384 bi |
| 内存集成电路类型 | CACHE SRAM | - | CACHE SRAM | CACHE SRAM |
| 内存宽度 | 8 | - | 8 | 8 |
| 功能数量 | 1 | - | 1 | 1 |
| 端子数量 | 24 | - | 24 | 24 |
| 字数 | 2048 words | - | 2048 words | 2048 words |
| 字数代码 | 2000 | - | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | - | 70 °C | 70 °C |
| 组织 | 2KX8 | - | 2KX8 | 2KX8 |
| 输出特性 | 3-STATE | - | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | - | DIP | DIP |
| 封装等效代码 | DIP24,.3 | - | DIP24,.3 | DIP24,.3 |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | - | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | - | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 240 | - | 240 | 240 |
| 电源 | 5 V | - | 5 V | 5 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified |
| 座面最大高度 | 5 mm | - | 5 mm | 5 mm |
| 最大压摆率 | 0.135 mA | - | 0.135 mA | 0.15 mA |
| 最大供电电压 (Vsup) | 5.5 V | - | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | - | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | - | 5 V | 5 V |
| 表面贴装 | NO | - | NO | NO |
| 技术 | CMOS | - | CMOS | CMOS |
| 温度等级 | COMMERCIAL | - | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | - | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | - | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 7.62 mm | - | 7.62 mm | 7.62 mm |
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