Ordering number : ENA1655
SMP3003
SANYO Semiconductors
DATA SHEET
SMP3003
Features
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
4V drive.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--75
±20
-
-100
-
-400
90
150
--55 to +150
468
--60
Unit
V
V
A
A
W
°C
°C
mJ
A
Note :
*1
VDD=--48V, L=100
μ
H, IAV=-
-60A
L
≤
100
μ
H, Single pulse
*2
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
Conditions
ID=--1mA, VGS=0V
VDS=--75V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
--1.2
Ratings
min
-
-75
--10
±10
--2.6
typ
max
Unit
V
μA
μA
V
Marking : MP3003
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
21710QA TK IM TC-00002253 No. A1655-1/3
SMP3003
Continued from preceding page.
Parameter
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, ID=--50A
ID=--50A, VGS=--10V
ID=--50A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--48V, VGS=--10V, ID=--100A
VDS=--48V, VGS=--10V, ID=--100A
VDS=--48V, VGS=--10V, ID=--100A
IS=--100A, VGS=0V
Ratings
min
typ
140
6.2
8.0
13400
1000
740
95
1000
800
820
280
50
55
-
-1.0
-
-1.5
8.0
11
max
Unit
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm (typ)
7001-003
10.2
0.2
4.5
1.3
1.5M AX
9.9
8.8
3.0
1
0.8
2
3
1.2
0 t o 0.3
0.4
2.7
2.55
2.55
1.35
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
2.55
2.55
Switching Time Test Circuit
VIN
VDD= --48V
1.4
Avalanche Resistance Test Circuit
L
≥50Ω
RG
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
D
ID= --50A
RL=0.96Ω
VOUT
0V
--10V
SMP3003
50Ω
VDD
P.G
SMP3003
50Ω
S
No. A1655-2/3
SMP3003
3
2
SW Time -- ID
td (off)
VDD= --48V
VGS= --10V
Switching Time, SW Time -- ns
--1000
7
5
3
2
ASO
IDP= --400A
ID= --100A
PW≤10μs
7
5
3
2
tf
Drain Current, ID -- A
1000
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
tr
Operation in
this area is
limited by RDS(on).
10
μ
s
10
0
μ
s
1m
10
s
m
DC
100m
s
op
s
era
tio
n
100
7
5
--0.1
2
3
5 7 --1.0
td(on)
2
3
5 7 --10
2
3
5 7 --100
IT15359
--0.1
--0.1
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
100
PD -- Tc
Drain-to-Source Voltage, VDS -- V
120
EAS -- Ta
5 7--100 2
IT15360
Allowable Power Dissipation, PD -- W
Avalanche Energy derating factor -- %
0
20
40
60
80
100
120
140
160
90
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT14184
Case Temperature, Tc --
°C
IT15361
Ambient Temperature, Ta --
°C
Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of February, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1655-3/3
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