JMnic
Product Specification
Silicon PNP Power Transistors
2SB1019
DESCRIPTION
・With
TO-220Fa package
・Low
saturation voltage
・Complement
to type 2SD1412
APPLICATIONS
・High
current switching applications
・Power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-70
-50
-5
-7
-1
2
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-4A ;I
B
=-0.4A
I
C
=-4A ;I
B
=-0.4A
V
CB
=-70V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-4A ; V
CE
=-1V
I
C
=-1A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
70
30
MIN
-50
2SB1019
TYP.
MAX
UNIT
V
-0.2
-0.9
-0.4
-1.2
-30
-50
240
V
V
μA
μA
10
250
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
R
L
=10Ω
I
B1
=-I
B2
=-0.3A
V
CC
=-30V
0.2
2.5
0.5
μs
μs
μs
h
FE-1
Classifications
O
70-140
Y
120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1019
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
