PD - 96168
IRG4PC50F-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AD package
Lead-Free
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.45V
@V
GE
= 15V, I
C
= 39A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AD
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
70
39
280
280
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.24
6 (0.21)
Max.
0.64
40
Units
°C/W
g (oz)
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1
08/06/08
IRG4PC50F-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage
18
V
(BR)ECS
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
0.62
1.45
V
CE(ON)
Collector-to-Emitter Saturation Voltage
1.79
1.53
V
GE(th)
Gate Threshold Voltage
3.0
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
-14
g
fe
Forward Transconductance
21
30
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Max. Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V
V
GE
= 0V, I
C
= 1.0A
V/°C V
GE
= 0V, I
C
= 1.0mA
V
GE
= 15V
1.6
I
C
= 39A
I
C
= 70A
See Fig.2, 5
V
I
C
= 39A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S
V
CE
=
100V, I
C
= 39A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
2000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 n A V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
190
28
65
31
25
240
130
0.37
2.1
2.47
28
24
390
230
5.0
13
4100
250
49
Max. Units
Conditions
290
I
C
= 39A
42
nC
V
CC
= 400V
See Fig. 8
97
V
GE
= 15V
T
J
= 25°C
ns
350
I
C
= 39A, V
CC
= 480V
190
V
GE
= 15V, R
G
= 5.0Ω
Energy losses include "tail"
mJ
See Fig. 10, 11, 13, 14
3.0
T
J
= 150°C,
I
C
= 39A, V
CC
= 480V
ns
V
GE
= 15V, R
G
= 5.0Ω
Energy losses include "tail"
mJ
See Fig. 13, 14
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
See Fig. 7
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC50F-EPbF
100
For both:
Triangular wave:
80
Load Current (A)
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 40W
Clamp voltage:
80% of rated
60
Square wave:
60% of rated
voltage
40
20
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
I
C
, Collector-to-Emitter Current (A)
1000
1000
100
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150°C
T
J
= 25°C
10
10
T
J
= 150°C
T
J
= 25°C
1
0.1
V
GE
= 15V
20µs PULSE WIDTH
A
1
10
1
5
6
7
8
9
V
CC
= 50V
5µs PULSE WIDTH
A
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC50F-EPbF
70
Maximum DC Collector Current (A)
60
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
= 15V
2.5
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 78A
50
2.0
40
30
I
C
= 39A
1.5
20
10
I
C
= 20A
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
25
50
75
100
125
150
1.0
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50F-EPbF
8000
V
GE
= 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
20
V
GE
, Gate-to-Emitter Voltage (V)
A
SHORTED
V
CE
= 400V
I
C
= 39A
16
C, Capacitance (pF)
6000
C
ies
4000
12
C
oes
2000
8
C
res
4
0
1
10
100
0
0
40
80
120
160
A
200
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.8
3.6
3.4
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25°C
= 39A
100
R
G
= 5.0
Ω
V
GE
= 15V
V
CC
= 480V
10
3.2
I
C
= 78A
I
C
= 39A
3.0
2.8
1
I
C
= 20A
2.6
2.4
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance
( Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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