IRFM450Z
MECHANICAL DATA
Dimensions in mm (inches)
2 6 .4 2
(1 .0 4 0 )
2 0 .0 7
(0 .7 9 0 )
1 3 .7 2
(0 .5 4 0 )
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
1 2 .7
(0 .5 0 0 )
m in .
6 .3 5
(0 .2 5 0 )
500V
12A
0.415
W
1 3 .7 2
(0 .5 4 0 )
1 .0 2
(0 .0 4 0 )
3 .8 1
(0 .1 5 0 )
2 p lc s .
6 .6 0
(0 .2 6 0 )
• HERMETICALLY SEALED ISOLATED
Z-TAB PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN A SURFACE
MOUNT PACKAGE
• EASE OF PARALLELING
TO–254 Z-TAB Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
CS
R
q
JA
Gate – Source Voltage
Continuous Drain Current
(V
GS
= 10V , T
case
= 25°C)
Continuous Drain Current
(V
GS
= 10V , T
case
= 100°C)
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
3
Operating and Storage Temperature Range
Lead Temperature measured
1/16
” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V
DD
= 50V , L
³
9.4mH , R
G
= 25
W
, Peak I
L
= 12A , Starting T
J
= 25°C
3) @ I
SD
£
12A , di/dt
£
130A/
m
s , V
DD
£
BV
DSS
, T
J
£
150°C , Suggested R
G
= 2.35
W
Semelab plc.
3 .8 1
(0 .1 5 0 )
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.02/00
IRFM450Z
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
³
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
I
D
= 8A
I
D
= 12A
I
D
= 250
m
A
I
DS
= 8A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
500
Typ.
Max.
Unit
V
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On–State
Resistance
2
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
0.68
0.415
0.515
2
6.5
25
250
100
–100
2700
600
240
12
55
5
27
120
19
70
35
190
170
130
12
48
4
V / °C
W
V
)
W
(
S(
W
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
m
A
nA
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 12A
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
= 12A
R
G
= 2.35
W
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
I
S
= 12A
V
GS
= 0
I
F
= 12A
T
J
= 25°C
Negligible
8.7
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
T
J
= 25°C
A
V
ns
1.7
1600
14
m
C
L
S
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
8.7
Notes
1) Repetitive Rating – Pulse width limited by Maximum
2) Pulse Test: Pulse Width
£
300
m
s,
d £
2%
Junction Temperature
* I Current limited by pin diameter.
S
nH
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.02/00
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