All Other Inputs and Outputs ....................................................................................................V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage .................................................................................................................................|V
DD
– V
SS
|
Output Short-Circuit Current .......................................................................................................................... Continuous
Current at Input Pins ...............................................................................................................................................±2 mA
Current at Output and Supply Pins ...................................................................................................................... ±30 mA
Storage Temperature ..............................................................................................................................-65°C to +150°C
ESD Protection on All Pins (HBM; MM)
4 kV; 400V
ESD Protection on All Pins (HBM; MM) (Dual and Quad)
4 kV; 300V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage Limits”.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 100 k to V
L
and C
L
= 30 pF (refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
V
OS
-1.0
—
75
—
—
—
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage
Range
Common Mode Rejection Ratio
V
CMR
CMRR
V
SS
– 0.3
75
70
—
90
85
V
DD
+ 0.3
—
—
V
dB
dB
V
DD
= 5.5V
V
CM
= -0.3V to 5.8V
V
DD
= 1.8V
V
CM
= -0.3V to 2.1V
I
OS
Z
CM
Z
DIFF
—
—
—
—
±3.0
90
±1
20
800
±1
10
13
||12
10
13
||12
1.0
—
—
50
—
—
—
—
—
mV
µV/°C
dB
pA
pA
pA
pA
||pF
|pF
T
A
= +85°C
T
A
= +125°C
V
DD
= 3.0V; V
CM
= V
DD
/4
T
A
= -40°C to +125°C,
V
CM
= V
SS
V
CM
= V
SS
Input Offset Drift with Temperature
V
OS
/T
A
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
PSRR
Sym.
Min.
Typ.
Max.
Units
Conditions
2013 Microchip Technology Inc.
DS20005165B-page 3
MCP6421/2/4
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 100 k to V
L
and C
L
= 30 pF (refer to
Figure 1-1).
Parameters
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
Output
High-Level Output Voltage
Low-Level Output Voltage
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
V
DD
I
Q
1.8
3
—
4.4
5.5
5.5
V
µA
I
O
= 0, V
CM
= V
DD
/4
V
OH
V
OL
I
SC
V
DD
– 4
V
DD
– 5
—
—
—
—
V
DD
– 1
V
DD
– 1
V
SS
+ 1
V
SS
+ 1
±6
±22
—
—
V
SS
+ 4
V
SS
+ 5
—
—
mV
mV
mV
mV
mA
mA
V
DD
= 1.8V
V
DD
= 5.5V
V
DD
= 1.8V
V
DD
= 5.5V
V
DD
= 1.8V
V
DD
= 5.5V
A
OL
95
115
—
dB
0.3 < V
OUT
< (V
DD
–0.3V)
V
CM
= V
SS
V
DD
= 5.5V
Sym.
Min.
Typ.
Max.
Units
Conditions
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 100 k to V
L
and C
L
= 30 pF (refer to
Figure 1-1).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electromagnetic Interference
Rejection Ratio
E
ni
e
ni
i
ni
EMIRR
—
—
—
—
—
—
—
—
15
95
90
0.6
77
92
97
99
—
—
—
—
—
—
—
—
µV
P-P
nV/Hz
nV/Hz
fA/Hz
dB
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
V
IN
= 100 mV
PK
,
400 MHz
V
IN
= 100 mV
PK
,
900 MHz
V
IN
= 100 mV
PK
,
1800 MHz
V
IN
= 100 mV
PK
,
2400 MHz
GBWP
PM
SR
—
—
—
90
55
0.05
—
—
—
kHz
°
V/µs
G = +1 V/V
Sym.
Min.
Typ.
Max.
Units
Conditions
DS20005165B-page 4
2013 Microchip Technology Inc.
MCP6421/2/4
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
JA
JA
JA
JA
JA
JA
—
—
—
—
—
—
331
221
211
150
95
100
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
-40
-65
—
—
+125
+150
°C
°C
Note 1
Sym.
Min.
Typ.
Max.
Units
Conditions
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
C
F
6.8 pF
R
G
100 k
V
P
V
IN+
MCP6421
V
IN–
V
M
R
G
100 k
R
F
100 k
C
F
6.8 pF
V
OUT
R
L
100 k
C
L
30 pF
C
B1
100 nF
R
F
100 k
V
DD
V
DD
/2
1.3
Test Circuits
The circuit used for most DC and AC tests is shown in
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