MDD72-12N1B
Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 1200 V
=
=
99 A
1.22 V
Phase leg
Part number
MDD72-12N1B
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
TO-240AA
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Height: 30 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019 IXYS all rights reserved
MDD72-12N1B
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1300
V
1200
200
15
1.27
1.60
1.22
1.60
99
180
0.80
2.3
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
357
1.70
1.84
1.45
1.56
W
kA
kA
kA
kA
V
R
= 1200 V
V
R
= 1200 V
I
F
= 150 A
I
F
= 300 A
I
F
= 150 A
I
F
= 300 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 100 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.35 K/W
0.2
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
116
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
14.5 kA²s
14.0 kA²s
10.4 kA²s
10.1 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019 IXYS all rights reserved
MDD72-12N1B
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
76
2.5
2.5
13.0
16.0
9.7
16.0
3600
3000
4
4
UL
Logo
Date Code +
Location
yywwZ
Circuit
XXXXXXXX
123456
2D Barcode
Part Number
Lot#
Ordering
Standard
Ordering Number
MDD72-12N1B
Marking on Product
MDD72-12N1B
Delivery Mode
Box
Quantity
36
Code No.
453188
Similar Part
MDD72-08N1B
MDD72-14N1B
MDD72-16N1B
MDD72-18N1B
Package
TO-240AA
TO-240AA
TO-240AA
TO-240AA
Voltage class
800
1400
1600
1800
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.8
1.1
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019 IXYS all rights reserved
MDD72-12N1B
Outlines TO-240AA
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019 IXYS all rights reserved
MDD72-12N1B
Rectifier
2500
50 Hz, 80% V
RRM
2000
10
5
V
R
= 0 V
200
250
DC
180° sin
120°
60°
30°
I
FAVM
1500
I
FSM
[A]
1000
T
VJ
= 150°C
T
VJ
= 45°C
I
2
t
10
4
150
T
VJ
= 45°C
T
VJ
= 150°C
[A]
100
[A
2
s]
500
50
0
10
-3
10
3
10
-2
10
-1
10
0
10
1
1
2
3
6
8 10
0
0
50
100
150
200
t [s]
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
250
t [ms]
Fig. 2 I
2
t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Maximum forward current
at case temperature
R
thJA
[K/W]
0.4
200
0.6
0.8
1
150
P
T
[W]
100
DC
180° sin
120°
60°
30°
1.2
1.5
2
3
50
0
0
50
100
150
0
50
100
150
200
I
TAVM
, I
FAVM
[A]
T
A
[°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
800
R
thKA
[K/W]
0.1
0.15
600
R
L
0.2
0.3
0.4
P
tot
400
[W]
Circuit
B2
2x MDD72
0.5
0.6
0.7
200
0
0
50
100
150
200
250
0
50
100
150
200
I
dAVM
[A]
T
A
[°C]
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202d
© 2019 IXYS all rights reserved
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